Inventor
SOYAMA NOBUYUKI
JP41 patents
⚠️ This page may combine multiple inventors who share the name “SOYAMA NOBUYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI MATERIALS CORP
27 patentsUS5630872AMay 20, 1997
Formation of thin-film patterns of a metal oxide
MITSUBISHI MATERIALS CORP37 citations92
US5605723AFeb 25, 1997
Method for forming a pattern of non-volatile ferroelectric thin film memory
MITSUBISHI MATERIALS CORP20 citations92
US5453294ASep 26, 1995
Method of controlling crystal orientation of PZT and PLZT thin films on platinum substrates
MITSUBISHI MATERIALS CORP30 citations90
US5637440AJun 10, 1997
Composition for forming metal oxide thin film pattern and method for forming metal oxide thin film pattern
MITSUBISHI MATERIALS CORP15 citations81
US5244742ASep 14, 1993
Ultrahigh-purity ferroelectric thin film
MITSUBISHI MATERIALS CORP15 citations74
US5824456AOct 20, 1998
Composition for forming metal oxide thin film pattern and method for forming metal oxide thin film pattern
MITSUBISHI MATERIALS CORP11 citations72
US7196211B2Mar 27, 2007
Hafnium-containing material for film formation, method for producing the same, and method for producing hafnium-containing thin film using the same
MITSUBISHI MATERIALS CORP7 citations70
US10195827B2Feb 5, 2019
Ferroelectric film and method of producing same
MITSUBISHI MATERIALS CORP1 citations62
US9018118B2Apr 28, 2015
Dielectric thin film-forming composition, method of forming dielectric thin film and dielectric thin film formed by the method
MITSUBISHI MATERIALS CORP2 citations61
US6987197B2Jan 17, 2006
Organozirconium composite and method of synthesizing the same, raw material solution containing the same, and method of forming lead zirconate titanate thin film
MITSUBISHI MATERIALS CORP2 citations60
US10112872B2Oct 30, 2018
Composition for forming Mn and Nb co-doped PZT-based piezoelectric film
MITSUBISHI MATERIALS CORP1 citations52
US9905417B2Feb 27, 2018
Composition for forming ferroelectric thin film, and method for manufacturing same
MITSUBISHI MATERIALS CORP0 citations52
US9799821B2Oct 24, 2017
Silicon substrate having ferroelectric film attached thereto
MITSUBISHI MATERIALS CORP0 citations52
US9666331B2May 30, 2017
Ferroelectric thin film-forming sol-gel solution
MITSUBISHI MATERIALS CORP0 citations52
US9502636B2Nov 22, 2016
Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof
MITSUBISHI MATERIALS CORP0 citations52
US9412485B2Aug 9, 2016
LaNiO3 thin film-forming composition and method of forming LaNiO3 thin film using the same
MITSUBISHI MATERIALS CORP1 citations52
US9251955B2Feb 2, 2016
PZT-based ferroelectric thin film and method of forming the same
MITSUBISHI MATERIALS CORP1 citations52
US9093198B2Jul 28, 2015
Method of producing ferroelectric thin film-forming composition and application of the same
MITSUBISHI MATERIALS CORP0 citations52
US9059405B2Jun 16, 2015
Ferroelectric thin film-forming sol-gel solution
MITSUBISHI MATERIALS CORP0 citations52
US9059406B2Jun 16, 2015
PZT-based ferroelectric thin film and method of manufacturing the same
MITSUBISHI MATERIALS CORP0 citations52
US9005358B2Apr 14, 2015
Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof
MITSUBISHI MATERIALS CORP0 citations52
US10797219B2Oct 6, 2020
Piezoelectric PTZT film, and process for producing liquid composition for forming said piezoelectric film
MITSUBISHI MATERIALS CORP0 citations51
US9228091B2Jan 5, 2016
Ferrite thin film-forming composition material, method of forming ferrite thin film, and ferrite thin film formed using the same
MITSUBISHI MATERIALS CORP0 citations51
US8648992B2Feb 11, 2014
Method for manufacturing thin film capacitor and thin film capacitor obtained by the same
MITSUBISHI MATERIALS CORP0 citations51
US10672973B2Jun 2, 2020
Composition for forming Ce-doped PZT-based piezoelectric film
MITSUBISHI MATERIALS CORP0 citations41
US10411183B2Sep 10, 2019
Composition for forming Mn-doped PZT-based piezoelectric film and Mn-doped PZT-based piezoelectric film
MITSUBISHI MATERIALS CORP0 citations41
US10005101B2Jun 26, 2018
Method of forming PNbZT ferroelectric thin film
MITSUBISHI MATERIALS CORP0 citations41
SYMETRIX CORP
6 patentsUS6051858AApr 18, 2000
Ferroelectric/high dielectric constant integrated circuit and method of fabricating same
SYMETRIX CORP125 citations98
US6022669AFeb 8, 2000
Method of fabricating an integrated circuit using self-patterned thin films
SYMETRIX CORP25 citations92
US5942376AAug 24, 1999
Shelf-stable liquid metal arylketone alcoholate solutions and use thereof in photoinitiated patterning of thin films
SYMETRIX CORP34 citations92
US5849465ADec 15, 1998
Photosensitive titanium carboxydiketonate and titanium carboxyketoester precursor solutions and method of patterning integrated circuits using the same
SYMETRIX CORP22 citations92
US5792592AAug 11, 1998
Photosensitive liquid precursor solutions and use thereof in making thin films
SYMETRIX CORP19 citations84
US5788757AAug 4, 1998
Composition and process using ester solvents for fabricating metal oxide films and electronic devices including the same
SYMETRIX CORP6 citations73
WATANABE TOSHIAKI
2 patentsFUJII JUN
2 patentsUS8859051B2Oct 14, 2014
Composition for ferroelectric thin film formation, method for forming ferroelectric thin film and ferroelectric thin film formed by the method thereof
FUJII JUN0 citations49
US8790538B2Jul 29, 2014
Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof
FUJII JUN0 citations49