P

Inventor

SOYAMA NOBUYUKI

JP41 patents
⚠️ This page may combine multiple inventors who share the name “SOYAMA NOBUYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI MATERIALS CORP

27 patents
US5630872AMay 20, 1997

Formation of thin-film patterns of a metal oxide

MITSUBISHI MATERIALS CORP37 citations92
US5605723AFeb 25, 1997

Method for forming a pattern of non-volatile ferroelectric thin film memory

MITSUBISHI MATERIALS CORP20 citations92
US5453294ASep 26, 1995

Method of controlling crystal orientation of PZT and PLZT thin films on platinum substrates

MITSUBISHI MATERIALS CORP30 citations90
US5637440AJun 10, 1997

Composition for forming metal oxide thin film pattern and method for forming metal oxide thin film pattern

MITSUBISHI MATERIALS CORP15 citations81
US5244742ASep 14, 1993

Ultrahigh-purity ferroelectric thin film

MITSUBISHI MATERIALS CORP15 citations74
US5824456AOct 20, 1998

Composition for forming metal oxide thin film pattern and method for forming metal oxide thin film pattern

MITSUBISHI MATERIALS CORP11 citations72
US7196211B2Mar 27, 2007

Hafnium-containing material for film formation, method for producing the same, and method for producing hafnium-containing thin film using the same

MITSUBISHI MATERIALS CORP7 citations70
US10195827B2Feb 5, 2019

Ferroelectric film and method of producing same

MITSUBISHI MATERIALS CORP1 citations62
US9018118B2Apr 28, 2015

Dielectric thin film-forming composition, method of forming dielectric thin film and dielectric thin film formed by the method

MITSUBISHI MATERIALS CORP2 citations61
US6987197B2Jan 17, 2006

Organozirconium composite and method of synthesizing the same, raw material solution containing the same, and method of forming lead zirconate titanate thin film

MITSUBISHI MATERIALS CORP2 citations60
US10112872B2Oct 30, 2018

Composition for forming Mn and Nb co-doped PZT-based piezoelectric film

MITSUBISHI MATERIALS CORP1 citations52
US9905417B2Feb 27, 2018

Composition for forming ferroelectric thin film, and method for manufacturing same

MITSUBISHI MATERIALS CORP0 citations52
US9799821B2Oct 24, 2017

Silicon substrate having ferroelectric film attached thereto

MITSUBISHI MATERIALS CORP0 citations52
US9666331B2May 30, 2017

Ferroelectric thin film-forming sol-gel solution

MITSUBISHI MATERIALS CORP0 citations52
US9502636B2Nov 22, 2016

Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof

MITSUBISHI MATERIALS CORP0 citations52
US9412485B2Aug 9, 2016

LaNiO3 thin film-forming composition and method of forming LaNiO3 thin film using the same

MITSUBISHI MATERIALS CORP1 citations52
US9251955B2Feb 2, 2016

PZT-based ferroelectric thin film and method of forming the same

MITSUBISHI MATERIALS CORP1 citations52
US9093198B2Jul 28, 2015

Method of producing ferroelectric thin film-forming composition and application of the same

MITSUBISHI MATERIALS CORP0 citations52
US9059405B2Jun 16, 2015

Ferroelectric thin film-forming sol-gel solution

MITSUBISHI MATERIALS CORP0 citations52
US9059406B2Jun 16, 2015

PZT-based ferroelectric thin film and method of manufacturing the same

MITSUBISHI MATERIALS CORP0 citations52
US9005358B2Apr 14, 2015

Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof

MITSUBISHI MATERIALS CORP0 citations52
US10797219B2Oct 6, 2020

Piezoelectric PTZT film, and process for producing liquid composition for forming said piezoelectric film

MITSUBISHI MATERIALS CORP0 citations51
US9228091B2Jan 5, 2016

Ferrite thin film-forming composition material, method of forming ferrite thin film, and ferrite thin film formed using the same

MITSUBISHI MATERIALS CORP0 citations51
US8648992B2Feb 11, 2014

Method for manufacturing thin film capacitor and thin film capacitor obtained by the same

MITSUBISHI MATERIALS CORP0 citations51
US10672973B2Jun 2, 2020

Composition for forming Ce-doped PZT-based piezoelectric film

MITSUBISHI MATERIALS CORP0 citations41
US10411183B2Sep 10, 2019

Composition for forming Mn-doped PZT-based piezoelectric film and Mn-doped PZT-based piezoelectric film

MITSUBISHI MATERIALS CORP0 citations41
US10005101B2Jun 26, 2018

Method of forming PNbZT ferroelectric thin film

MITSUBISHI MATERIALS CORP0 citations41

SYMETRIX CORP

6 patents

WATANABE TOSHIAKI

2 patents

FUJII JUN

2 patents

SAKURAI HIDEAKI

2 patents

GUEGAN GUILLAUME

1 patent

JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECH

1 patent