Inventor
MIYAKUNI SHINICHI
JP14 patents
⚠️ This page may combine multiple inventors who share the name “MIYAKUNI SHINICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
12 patentsUS6013926AJan 11, 2000
Semiconductor device with refractory metal element
MITSUBISHI ELECTRIC CORP110 citations97
US5942447AAug 24, 1999
Method of selectively etching compound semiconductor and method of manufacturing compound semiconductor device using the selective etching method
MITSUBISHI ELECTRIC CORP27 citations92
US5888859AMar 30, 1999
Method of fabricating semiconductor device
MITSUBISHI ELECTRIC CORP18 citations83
US5726468AMar 10, 1998
Compound semiconductor bipolar transistor
MITSUBISHI ELECTRIC CORP10 citations74
US6081003AJun 27, 2000
Heterojunction bipolar transistor with ballast resistor
MITSUBISHI ELECTRIC CORP6 citations73
US5512331AApr 30, 1996
Etching method for indium series compound semiconductors
MITSUBISHI ELECTRIC CORP10 citations73
US5370767ADec 6, 1994
Selective dry etching method for compound semiconductor and production method of semiconductor device
MITSUBISHI ELECTRIC CORP10 citations66
US6271098B1Aug 7, 2001
Heterojunction bipolar transistor and method for producing the same
MITSUBISHI ELECTRIC CORP2 citations62
US11881516B2Jan 23, 2024
Semiconductor element comprising a MIM capacitor and a via hole, a bottom of the via hole being placed between a rear surface of a source electrode and a rear surface of a barrier metal layer
MITSUBISHI ELECTRIC CORP0 citations60
US12243739B2Mar 4, 2025
Semiconductor wafer and method for manufacturing same
MITSUBISHI ELECTRIC CORP0 citations54
US9117896B2Aug 25, 2015
Semiconductor device with improved conductivity
MITSUBISHI ELECTRIC CORP0 citations51
US9805978B2Oct 31, 2017
Method of manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP0 citations48