Inventor
BUDGE WILLIAM
US19 patents
⚠️ This page may combine multiple inventors who share the name “BUDGE WILLIAM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
18 patentsUS7271463B2Sep 18, 2007
Trench insulation structures including an oxide liner that is thinner along the walls of the trench than along the base
MICRON TECHNOLOGY INC27 citations92
US6617230B2Sep 9, 2003
Use of selective ozone teos oxide to create variable thickness layers and spacers
MICRON TECHNOLOGY INC14 citations92
US6368986B1Apr 9, 2002
Use of selective ozone TEOS oxide to create variable thickness layers and spacers
MICRON TECHNOLOGY INC16 citations92
US7632737B2Dec 15, 2009
Protection in integrated circuits
MICRON TECHNOLOGY INC6 citations74
US7479440B2Jan 20, 2009
Method of forming an isolation structure that includes forming a silicon layer at a base of the recess
MICRON TECHNOLOGY INC4 citations73
US7214979B2May 8, 2007
Selectively deposited silicon oxide layers on a silicon substrate
MICRON TECHNOLOGY INC4 citations73
US6602807B2Aug 5, 2003
Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and off
MICRON TECHNOLOGY INC9 citations73
US6503851B2Jan 7, 2003
Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and off
MICRON TECHNOLOGY INC8 citations73
US7494894B2Feb 24, 2009
Protection in integrated circuits
MICRON TECHNOLOGY INC4 citations63
US7273793B2Sep 25, 2007
Methods of filling gaps using high density plasma chemical vapor deposition
MICRON TECHNOLOGY INC1 citations63
US7078356B2Jul 18, 2006
Low K interlevel dielectric layer fabrication methods
MICRON TECHNOLOGY INC2 citations63
US7067415B2Jun 27, 2006
Low k interlevel dielectric layer fabrication methods
MICRON TECHNOLOGY INC1 citations63
US7056833B2Jun 6, 2006
Methods of filling gaps and methods of depositing materials using high density plasma chemical vapor deposition
MICRON TECHNOLOGY INC3 citations63
US7501691B2Mar 10, 2009
Trench insulation structures including an oxide liner and oxidation barrier
MICRON TECHNOLOGY INC2 citations62
US7192893B2Mar 20, 2007
Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and off
MICRON TECHNOLOGY INC1 citations62
US7521354B2Apr 21, 2009
Low k interlevel dielectric layer fabrication methods
MICRON TECHNOLOGY INC0 citations52
US7202183B2Apr 10, 2007
Method of filling gaps and methods of depositing materials using high density plasma chemical vapor deposition
MICRON TECHNOLOGY INC0 citations52
US7067414B1Jun 27, 2006
Low k interlevel dielectric layer fabrication methods
MICRON TECHNOLOGY INC0 citations52