Inventor · disambiguated record
Shang-Jr Gwo
Also filed as: GWO SHANG-JR
9 granted patents·4 pending applications·65 citations·filing 2006–2024
85Inventor score
Top patents by PatentIndex Score
13 records- 0196US10348058B1Two-dimensional material plasmonic laserUNIV NAT TSING HUA·Filed 2018·Granted Jul 9, 2019·24 cites·19 claims
- 0294US8835903B2Light-emitting diode display and method of producing the sameGWO SHANG-JR·Filed 2012·Granted Sep 16, 2014·22 cites·25 claims
- 0388US8950240B2Acetone gas sensor apparatusYEH JER-LIANG ANDREW·Filed 2012·Granted Feb 10, 2015·10 cites·17 claims
- 0481US8309185B2Nanoparticle film and forming method and application thereofLIN MENG-HSIEN·Filed 2010·Granted Nov 13, 2012·4 cites·15 claims
- 0573US12078535B2Single-photon detector, and array and fabricating method thereofHERMES EPITEK CORP·Filed 2022·Granted Sep 3, 2024·0 cites·30 claims
- 0671US8669128B2Method of producing III-nitride light-emitting diodeGWO SHANG-JR·Filed 2011·Granted Mar 11, 2014·2 cites·18 claims
- 0771US8242523B2III-Nitride light-emitting diode and method of producing the sameGWO SHANG-JR·Filed 2010·Granted Aug 14, 2012·2 cites·30 claims
- 0859US7709823B2Group-III nitride vertical-rods substrateIND TECH RES INST·Filed 2006·Granted May 4, 2010·1 cites·21 claims
- 0958US2025157835A1Heating apparatus and pretrement method for waferHERMES EPITEK CORP·Filed 2023·Application pending·0 cites
- 1051US2024397834A1(Nb1-xTix)N SUPERCONDUCTING NANOWIRE SINGLE-PHOTON DETECTORS WITH INTEGRATED TRANSITION-METAL NITRIDE REFLECTORSHERMES EPITEK CORP·Filed 2024·Application pending·0 cites
- 1147US8008691B2Ion sensitive field effect transistor and production method thereofNAT UNIV TSING HUA·Filed 2009·Granted Aug 30, 2011·0 cites·15 claims
- 1247US2011006035A1Method for modifying surface in selective areas and method for forming patternsNAT UNIV TSING HUA·Filed 2009·Application pending·0 cites
- 1336US2017261434A1Sers substrateNAT UNIV TSING HUA·Filed 2016·Application pending·0 cites
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