Inventor
NAGAYAMA TETSUJI
JP11 patents
Patents
11 patentsUS5831321ANov 3, 1998
Semiconductor device in which an anti-reflective layer is formed by varying the composition thereof
SONY CORP83 citations95
US5674356AOct 7, 1997
Method for forming a semiconductor device in which an anti reflective layer is formed by varying the composition thereof
SONY CORP72 citations95
US5632910AMay 27, 1997
Multilayer resist pattern forming method
SONY CORP74 citations95
US5378311AJan 3, 1995
Method of producing semiconductor device
SONY CORP84 citations95
US5997757ADec 7, 1999
Method of forming connection hole
SONY CORP26 citations92
US5369061ANov 29, 1994
Method of producing semiconductor device using a hydrogen-enriched layer
SONY CORP23 citations92
US5368686ANov 29, 1994
Dry etching method for W polycide using sulfur deposition
SONY CORP45 citations92
US5354421AOct 11, 1994
Dry etching method
SONY CORP23 citations92
US6057243AMay 2, 2000
Method for producing semiconductor device
SONY CORP16 citations83
US5419809AMay 30, 1995
Dry etching method
SONY CORP11 citations73
US5268070ADec 7, 1993
Dry etching method
SONY CORP9 citations73