Inventor

LIANG JIALE

US3 patents

⚠️ This page may combine multiple inventors who share the name “LIANG JIALE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ANDERSON BRENT A

1 patent

US8698245B2Apr 15, 2014

Partially depleted (PD) semiconductor-on-insulator (SOI) field effect transistor (FET) structure with a gate-to-body tunnel current region for threshold voltage (VT) lowering and method of forming the structure

ANDERSON BRENT A2 citations60

IBM

1 patent

US8809954B2Aug 19, 2014

Partially depleted (PD) semiconductor-on-insulator (SOI) field effect transistor (FET) structure with a gate-to-body tunnel current region for threshold voltage (Vt) lowering and method of forming the structure

IBM1 citations50

NVIDIA CORP

1 patent

US12339700B2Jun 24, 2025

Transient current-mode signaling scheme for on-chip interconnect fabrics

NVIDIA CORP0 citations49