P

Inventor

YAMAGATA TADATO

JP46 patents
⚠️ This page may combine multiple inventors who share the name “YAMAGATA TADATO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

39 patents
US5726946AMar 10, 1998

Semiconductor integrated circuit device having hierarchical power source arrangement

MITSUBISHI ELECTRIC CORP224 citations99
US5319589AJun 7, 1994

Dynamic content addressable memory device and a method of operating thereof

MITSUBISHI ELECTRIC CORP143 citations98
US6310815B1Oct 30, 2001

Multi-bank semiconductor memory device suitable for integration with logic

MITSUBISHI ELECTRIC CORP98 citations97
US6643208B2Nov 4, 2003

Semiconductor integrated circuit device having hierarchical power source arrangement

MITSUBISHI ELECTRIC CORP32 citations96
US6134171AOct 17, 2000

Semiconductor integrated circuit device having hierarchical power source arrangement

MITSUBISHI ELECTRIC CORP68 citations96
US5959927ASep 28, 1999

Semiconductor integrated circuit device having hierarchical power source arrangement

MITSUBISHI ELECTRIC CORP33 citations96
US6525984B2Feb 25, 2003

Semiconductor integrated circuit device having hierarchical power source arrangement

MITSUBISHI ELECTRIC CORP17 citations93
US6515922B1Feb 4, 2003

Memory module

MITSUBISHI ELECTRIC CORP22 citations93
US6341098B2Jan 22, 2002

Semiconductor integrated circuit device having hierarchical power source arrangement

MITSUBISHI ELECTRIC CORP14 citations93
US6246625B1Jun 12, 2001

Semiconductor integrated circuit device having hierarchical power source arrangement

MITSUBISHI ELECTRIC CORP19 citations93
US6163493ADec 19, 2000

Semiconductor integrated circuit device with large internal bus width, including memory and logic circuit

MITSUBISHI ELECTRIC CORP32 citations93
US5910181AJun 8, 1999

Semiconductor integrated circuit device comprising synchronous DRAM core and logic circuit integrated into a single chip and method of testing the synchronous DRAM core

MITSUBISHI ELECTRIC CORP40 citations93
US5798974AAug 25, 1998

Semiconductor memory device realizing high speed access and low power consumption with redundant circuit

MITSUBISHI ELECTRIC CORP32 citations93
US5404329AApr 4, 1995

Boosting circuit improved to operate in a wider range of power supply voltage, and a semiconductor memory and a semiconductor integrated circuit device using the same

MITSUBISHI ELECTRIC CORP29 citations93
US5388066AFeb 7, 1995

Content addressable memory device and a method of disabling a coincidence word thereof

MITSUBISHI ELECTRIC CORP36 citations93
US5367493ANov 22, 1994

Dynamic type semiconductor memory device having reduced peak current during refresh mode and method of operating the same

MITSUBISHI ELECTRIC CORP25 citations93
US5228000AJul 13, 1993

Test circuit of semiconductor memory device

MITSUBISHI ELECTRIC CORP22 citations93
US5158899AOct 27, 1992

Method of manufacturing input circuit of semiconductor device

MITSUBISHI ELECTRIC CORP24 citations93
US5016220AMay 14, 1991

Semiconductor memory device with logic level responsive testing circuit and method therefor

MITSUBISHI ELECTRIC CORP34 citations93
US4984054AJan 8, 1991

Electric fuse for a redundancy circuit

MITSUBISHI ELECTRIC CORP38 citations93
US4974053ANov 27, 1990

Semiconductor device for multiple packaging configurations

MITSUBISHI ELECTRIC CORP34 citations93
US4788455ANov 29, 1988

CMOS reference voltage generator employing separate reference circuits for each output transistor

MITSUBISHI ELECTRIC CORP33 citations93
US4780850AOct 25, 1988

CMOS dynamic random access memory

MITSUBISHI ELECTRIC CORP45 citations93
US5930194AJul 27, 1999

Semiconductor memory device capable of block writing in large bus width

MITSUBISHI ELECTRIC CORP37 citations92
US5475638ADec 12, 1995

Static random access memory device having a single bit line configuration

MITSUBISHI ELECTRIC CORP23 citations92
US5146300ASep 8, 1992

Semiconductor integrated circuit device having improved stacked capacitor and manufacturing method therefor

MITSUBISHI ELECTRIC CORP47 citations92
US6069379AMay 30, 2000

Semiconductor device and method of manufacturing the same

MITSUBISHI ELECTRIC CORP11 citations74
US5726943AMar 10, 1998

Fast memory device allowing suppression of peak value of operational current

MITSUBISHI ELECTRIC CORP15 citations74
US5694354ADec 2, 1997

Static random access memory device having a single bit line configuration

MITSUBISHI ELECTRIC CORP11 citations74
US5572469ANov 5, 1996

Static random access memory device having a single bit line configuration

MITSUBISHI ELECTRIC CORP6 citations74
US5126968AJun 30, 1992

Content addressable semiconductor memory device and operating method therefor

MITSUBISHI ELECTRIC CORP16 citations74
US5083188AJan 21, 1992

Integrated circuit having superconductive wirings

MITSUBISHI ELECTRIC CORP7 citations74
US4904885AFeb 27, 1990

Substrate bias circuit having substrate bias voltage clamp and operating method therefor

MITSUBISHI ELECTRIC CORP13 citations74
US4734889AMar 29, 1988

Semiconductor memory

MITSUBISHI ELECTRIC CORP13 citations74
US5677889AOct 14, 1997

Static type semiconductor device operable at a low voltage with small power consumption

MITSUBISHI ELECTRIC CORP17 citations73
US6214664B1Apr 10, 2001

Method of manufacturing semiconductor device

MITSUBISHI ELECTRIC CORP3 citations63
US5418923AMay 23, 1995

Circuit for prioritizing outputs of an associative memory with parallel inhibition paths and a compact architecture

MITSUBISHI ELECTRIC CORP6 citations63
US4870620ASep 26, 1989

Dynamic random access memory device with internal refresh

MITSUBISHI ELECTRIC CORP6 citations63
US5650978AJul 22, 1997

Semiconductor memory device having data transition detecting function

MITSUBISHI ELECTRIC CORP5 citations62

RENESAS TECH CORP

4 patents

MITSUBISHI DENKI KABUSHIKI DEN

1 patent

RENESAS ELECTRONICS CORP

1 patent

TSUTSUMI TOSHIAKI

1 patent