Inventor
WEIS ROLF
DE109 patents
⚠️ This page may combine multiple inventors who share the name “WEIS ROLF”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
17 patentsUS7132333B2Nov 7, 2006
Transistor, memory cell array and method of manufacturing a transistor
INFINEON TECHNOLOGIES AG58 citations96
US6599798B2Jul 29, 2003
Method of preparing buried LOCOS collar in trench DRAMS
INFINEON TECHNOLOGIES AG26 citations93
US6576944B2Jun 10, 2003
Self-aligned nitride pattern for improved process window
INFINEON TECHNOLOGIES AG20 citations93
US6448610B2Sep 10, 2002
Memory cell with trench, and method for production thereof
INFINEON TECHNOLOGIES AG20 citations93
US7635893B2Dec 22, 2009
Transistor, memory cell array and method of manufacturing a transistor
INFINEON TECHNOLOGIES AG23 citations92
US6496401B2Dec 17, 2002
Memory cell configuration
INFINEON TECHNOLOGIES AG18 citations84
US7442609B2Oct 28, 2008
Method of manufacturing a transistor and a method of forming a memory device with isolation trenches
INFINEON TECHNOLOGIES AG10 citations83
US7301192B2Nov 27, 2007
Dram cell pair and dram memory cell array
INFINEON TECHNOLOGIES AG11 citations83
US7569878B2Aug 4, 2009
Fabricating a memory cell array
INFINEON TECHNOLOGIES AG17 citations82
US6825096B2Nov 30, 2004
Method of forming an alignment mark structure using standard process steps for forming vertical gate transistors
INFINEON TECHNOLOGIES AG11 citations74
US6797636B2Sep 28, 2004
Process of fabricating DRAM cells with collar isolation layers
INFINEON TECHNOLOGIES AG10 citations74
US6762443B2Jul 13, 2004
Vertical transistor and transistor fabrication method
INFINEON TECHNOLOGIES AG10 citations74
US6610573B2Aug 26, 2003
Method for forming a single wiring level for transistors with planar and vertical gates on the same substrate
INFINEON TECHNOLOGIES AG11 citations74
US10777839B2Sep 15, 2020
Method for forming a battery element, a battery element and a battery
INFINEON TECHNOLOGIES AG2 citations73
US9859542B2Jan 2, 2018
Battery element, a battery and a method for forming a battery
INFINEON TECHNOLOGIES AG3 citations73
US9735243B2Aug 15, 2017
Semiconductor device, integrated circuit and method of forming a semiconductor device
INFINEON TECHNOLOGIES AG5 citations73
US6544855B1Apr 8, 2003
Process flow for sacrificial collar with polysilicon void
INFINEON TECHNOLOGIES AG11 citations72
WEIS ROLF
9 patentsUS8569842B2Oct 29, 2013
Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices
WEIS ROLF83 citations98
US8970262B2Mar 3, 2015
Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices
WEIS ROLF28 citations94
US8455948B2Jun 4, 2013
Transistor arrangement with a first transistor and with a plurality of second transistors
WEIS ROLF27 citations92
US9035690B2May 19, 2015
Circuit arrangement with a first semiconductor device and with a plurality of second semiconductor devices
WEIS ROLF7 citations84
US8971080B2Mar 3, 2015
Circuit arrangement with a rectifier circuit
WEIS ROLF10 citations84
US8866253B2Oct 21, 2014
Semiconductor arrangement with active drift zone
WEIS ROLF12 citations84
US8759939B2Jun 24, 2014
Semiconductor arrangement with active drift zone
WEIS ROLF9 citations84
US9859274B2Jan 2, 2018
Integrated circuit with at least two switches
WEIS ROLF4 citations73
US8130537B2Mar 6, 2012
Phase change memory cell with MOSFET driven bipolar access device
WEIS ROLF6 citations73
INFINEON TECHNOLOGIES DRESDEN GMBH
9 patentsUS9007117B2Apr 14, 2015
Solid-state switching device having a high-voltage switching transistor and a low-voltage driver transistor
INFINEON TECHNOLOGIES DRESDEN GMBH7 citations84
US8995158B2Mar 31, 2015
Circuit arrangement with a rectifier circuit
INFINEON TECHNOLOGIES DRESDEN GMBH8 citations84
US8987090B2Mar 24, 2015
Method of manufacturing a semiconductor device with device separation structures
INFINEON TECHNOLOGIES DRESDEN GMBH6 citations84
US8980714B2Mar 17, 2015
Semiconductor device with buried gate electrode structures
INFINEON TECHNOLOGIES DRESDEN GMBH6 citations84
US9659929B2May 23, 2017
Semiconductor device with enhancement and depletion FinFET cells
INFINEON TECHNOLOGIES DRESDEN GMBH4 citations73
US9484834B2Nov 1, 2016
Circuit arrangement with a rectifier circuit
INFINEON TECHNOLOGIES DRESDEN GMBH4 citations73
US9219149B2Dec 22, 2015
Semiconductor device with vertical transistor channels and a compensation structure
INFINEON TECHNOLOGIES DRESDEN GMBH4 citations72
US9496859B2Nov 15, 2016
Circuit arrangement with a first semiconductor device and with a plurality of second semiconductor devices
INFINEON TECHNOLOGIES DRESDEN GMBH2 citations63
US9368408B2Jun 14, 2016
Method of manufacturing a semiconductor device with buried channel/body zone and semiconductor device
INFINEON TECHNOLOGIES DRESDEN GMBH2 citations63
QIMONDA AG
4 patentsUS7727837B2Jun 1, 2010
Method of producing an integrated circuit having a capacitor with a supporting layer
QIMONDA AG19 citations92
US7642572B2Jan 5, 2010
Integrated circuit having a memory cell array and method of forming an integrated circuit
QIMONDA AG27 citations92
US7605037B2Oct 20, 2009
Manufacturing method for an integrated semiconductor memory device and corresponding semiconductor memory device
QIMONDA AG8 citations84
US7763513B2Jul 27, 2010
Integrated circuit device and method of manufacture
QIMONDA AG15 citations82
INFINEON TECHNOLOGIES AUSTRIA AG
3 patentsUS9590507B1Mar 7, 2017
Auxiliary supply for a switched-mode power supply controller using bang-bang regulation
INFINEON TECHNOLOGIES AUSTRIA AG5 citations73
US9444363B1Sep 13, 2016
Circuit arrangement with a rectifier circuit
INFINEON TECHNOLOGIES AUSTRIA AG3 citations73
US9793803B2Oct 17, 2017
Power converter circuit
INFINEON TECHNOLOGIES AUSTRIA AG3 citations68
IBM
2 patentsINFINEON TECH DRESDEN GMBH & CO KG
2 patentsFREUDENBERG CARL FA
2 patentsSCHLOESSER TILL
1 patentKUND MICHAEL
1 patentShowing the top 50 of 109 patents by PatentIndex Score.