Inventor

HIRLER FRANZ

DE385 patents

⚠️ This page may combine multiple inventors who share the name “HIRLER FRANZ”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HIRLER FRANZ

INFINEON TECHNOLOGIES AG

Semiconductor arrangement with a MOS-transistor and a parallel Schottky-diode

Semiconductor component with an increased breakdown voltage in the edge area

Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitance

MOS-transistor structure with a trench-gate-electrode and a limited specific turn-on resistance and method for producing an MOS-transistor structure

Switch mode power supply with reduced switching losses

Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configuration

Trench power semiconductor

Trench MOS transistor

Power transistor

Power trench transistor

High blocking semiconductor component comprising a drift section

Vertical semiconductor component with source-down design and corresponding fabrication method

Semiconductor configuration

Lateral semiconductor component with a drift zone having at least one field electrode

Trench transistor and method for fabricating a trench transistor

Power transistor arrangement and method for fabricating it

Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone

Transistor configuration with a structure for making electrical contact with electrodes of a trench transistor cell

Method for fabricating a trench MOS power transistor

MOS transistor device with a locally maximum concentration region between the source region and the drain region

INFINEON TECHNOLOGIES AUSTRIA

Semiconductor device

Semiconductor device with a trench gate structure and method for the production thereof

Field plate trench transistor and method for producing it

Method for producing an integrated circuit including a trench transistor and integrated circuit

Method for fabricating a semiconductor component

Field plate trench transistor and method for producing it

Superjunction device and semiconductor structure comprising the same

Semiconductor field effect power switching device

Charge compensation semiconductor devices

Power MOSFET semiconductor

Semiconductor device with charge compensation structure

Semiconductor device with a super junction structure with one, two or more pairs of compensation layers

High-voltage semiconductor switch and method for switching high voltages

HIRLER FRANZ

Semiconductor structure, method for operating a semiconductor structure and method for producing a semiconductor structure

Semiconductor component having a space saving edge structure

Semiconductor component with a space saving edge structure

Super junction semiconductor device comprising a cell area and an edge area

Semiconductor field effect power switching device

WEIS ROLF

Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices

Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices

INFINEON TECHNOLOGIES AUSTRIA AG

Power MOSFET semiconductor

Semiconductor device with field electrode structures in a cell area and termination structures in an edge area

MAUDER ANTON

Current measurement in a power transistor

Power semiconductor device and a method for forming a semiconductor device

SCHULZE HANS-JOACHIM

Semiconductor device including an edge area and method of manufacturing a semiconductor device

Power transistor device vertical integration

HAEBERLEN OLIVER

Power MOSFET semiconductor device

SEDLMAIER STEFAN

Stress-reduced field-effect semiconductor device and method for forming therefor

WILLMEROTH ARMIN

Transistor with controllable compensation regions

ZUNDEL MARKUS

Method for producing a semiconductor component arrangement comprising a trench transistor