P

Inventor

MEISER ANDREAS

DE138 patents
⚠️ This page may combine multiple inventors who share the name “MEISER ANDREAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

30 patents
US7468307B2Dec 23, 2008

Semiconductor structure and method

INFINEON TECHNOLOGIES AG28 citations92
US9705026B2Jul 11, 2017

Method of triggering avalanche breakdown in a semiconductor device

INFINEON TECHNOLOGIES AG16 citations91
US9853637B1Dec 26, 2017

Dual gate switch device

INFINEON TECHNOLOGIES AG14 citations84
US8373449B2Feb 12, 2013

Circuit arrangement including a common source sense-FET

INFINEON TECHNOLOGIES AG18 citations84
US7982284B2Jul 19, 2011

Semiconductor component including an isolation structure and a contact to the substrate

INFINEON TECHNOLOGIES AG10 citations84
US8847311B2Sep 30, 2014

Semiconductor device and method of manufacturing a semiconductor device

INFINEON TECHNOLOGIES AG11 citations83
US11011606B2May 18, 2021

Semiconductor component having a SiC semiconductor body and method for producing a semiconductor component

INFINEON TECHNOLOGIES AG3 citations73
US10586851B2Mar 10, 2020

Silicon carbide semiconductor device and method of manufacturing

INFINEON TECHNOLOGIES AG1 citations73
US10277219B2Apr 30, 2019

Electronic switching and reverse polarity protection circuit

INFINEON TECHNOLOGIES AG5 citations73
US10128750B2Nov 13, 2018

Switched-mode power converter with an inductive storage element and a cascode circuit

INFINEON TECHNOLOGIES AG2 citations73
US9985126B2May 29, 2018

Semiconductor device comprising a first gate electrode and a second gate electrode

INFINEON TECHNOLOGIES AG2 citations73
US9960156B2May 1, 2018

Integrated semiconductor device having a level shifter

INFINEON TECHNOLOGIES AG2 citations73
US9882555B2Jan 30, 2018

Switch device

INFINEON TECHNOLOGIES AG2 citations73
US9806188B2Oct 31, 2017

Method for producing a controllable semiconductor component having trenches with different widths and depths

INFINEON TECHNOLOGIES AG2 citations73
US9735243B2Aug 15, 2017

Semiconductor device, integrated circuit and method of forming a semiconductor device

INFINEON TECHNOLOGIES AG5 citations73
US9728580B2Aug 8, 2017

Power transistor with integrated temperature sensor element, power transistor circuit, method for operating a power transistor, and method for operating a power transistor circuit

INFINEON TECHNOLOGIES AG5 citations73
US9608070B2Mar 28, 2017

Semiconductor device comprising a field effect transistor and method of manufacturing the semiconductor device

INFINEON TECHNOLOGIES AG2 citations73
US9570576B2Feb 14, 2017

Method for forming a semiconductor device having insulating parts or layers formed via anodic oxidation

INFINEON TECHNOLOGIES AG2 citations73
US9306058B2Apr 5, 2016

Integrated circuit and method of manufacturing an integrated circuit

INFINEON TECHNOLOGIES AG3 citations73
US9123559B2Sep 1, 2015

Method for producing a semiconductor component

INFINEON TECHNOLOGIES AG5 citations73
US9123801B2Sep 1, 2015

Semiconductor device, integrated circuit and method of manufacturing a semiconductor device

INFINEON TECHNOLOGIES AG4 citations73
US8710575B1Apr 29, 2014

Semiconductor device, integrated circuit and method of manufacturing an integrated circuit

INFINEON TECHNOLOGIES AG5 citations72
US9953968B2Apr 24, 2018

Integrated circuit having an ESD protection structure and photon source

INFINEON TECHNOLOGIES AG4 citations71
US11069782B2Jul 20, 2021

Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device

INFINEON TECHNOLOGIES AG0 citations63
US11031494B2Jun 8, 2021

Silicon carbide semiconductor device having a gate electrode formed in a trench structure

INFINEON TECHNOLOGIES AG0 citations63
US10964808B2Mar 30, 2021

Silicon carbide semiconductor device with trench gate structure and vertical PN junction between body region and drift structure

INFINEON TECHNOLOGIES AG0 citations63
US9893158B2Feb 13, 2018

Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device

INFINEON TECHNOLOGIES AG1 citations63
US9401399B2Jul 26, 2016

Semiconductor device

INFINEON TECHNOLOGIES AG2 citations63
US9362371B2Jun 7, 2016

Method for producing a controllable semiconductor component having a plurality of trenches

INFINEON TECHNOLOGIES AG2 citations63
US9029941B2May 12, 2015

Vertical transistor component

INFINEON TECHNOLOGIES AG2 citations63

INFINEON TECHNOLOGIES AUSTRIA AG

6 patents

INFINEON TECHNOLOGIES AUSTRIA

4 patents

MEISER ANDREAS

2 patents

INFINEON TECH DRESDEN GMBH & CO KG

2 patents

HIRLER FRANZ

2 patents

WEYERS JOACHIM

1 patent

INFINEON TECHNOLOGIES DRESDEN GMBH

1 patent

THIELE STEFFEN

1 patent

INFINEON TECHNOLOIGES AG

1 patent

Showing the top 50 of 138 patents by PatentIndex Score.