Inventor

CHUMBES EDUARDO M

US24 patents

⚠️ This page may combine multiple inventors who share the name “CHUMBES EDUARDO M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHUMBES EDUARDO M

RAYTHEON CO

Doped barrier layers in epitaxial group III nitrides

Nitride structure having gold-free contact and methods for forming such structures

Nitride structure having gold-free contact and methods for forming such structures

Group III—nitride double-heterojunction field effect transistor

Double heterojunction group III-nitride structures

Nitride structures having low capacitance gate contacts integrated with copper damascene structures

Group III—nitride double-heterojunction field effect transistor

AIN channel heterostructure field effect transistor

Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structures

Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structures

Strain compensated rare earth group III-nitride heterostructures

Semiconductor structures having a gate field plate and methods for forming such structure

Heterojunction field effect transistor (HFET) variable gain amplifier having variable transconductance

Tunable monolithic group III-nitride filter banks

Field effect transistor having field plate

RAYTHEON BBN TECHNOLOGIES CORP

Photonic and electric devices on a common layer

Photonic devices

Photonic devices

Photonic devices

Photonic devices

Photonic devices

TABATABAIE KAMAL

Gallium nitride devices having low ohmic contact resistance

UNIV CALIFORNIA

Low-temperature deposition of high-quality aluminum nitride films for heat spreading applications

CHUMBES EDUARDO M

Semiconductor structure with layers having different hydrogen contents