Inventor
LIN PO-TING
TW22 patents
⚠️ This page may combine multiple inventors who share the name “LIN PO-TING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
16 patentsUS11527649B1Dec 13, 2022
Ferroelectric field effect transistor devices and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations85
US12575137B2Mar 10, 2026
Thin film transistor including a compositionally-modulated active region and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12550383B2Feb 10, 2026
Double gate ferroelectric field effect transistor devices and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12402358B2Aug 26, 2025
Thin film transistor including a compositionally-modulated active region and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12170321B2Dec 17, 2024
Fin field effect transistor having conformal and non-conformal gate dielectric layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12150309B2Nov 19, 2024
Double gate metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMIS-FET) structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12119402B2Oct 15, 2024
Semiconductor devices with ferroelectric layer and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11984508B2May 14, 2024
Thin film transistor including a compositionally-modulated active region and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11908936B2Feb 20, 2024
Double gate ferroelectric field effect transistor devices and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11817498B2Nov 14, 2023
Ferroelectric field effect transistor devices and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11810956B2Nov 7, 2023
In-situ thermal annealing of electrode to form seed layer for improving FeRAM performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11670715B2Jun 6, 2023
Semiconductor devices with ferroelectric layer and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12376347B2Jul 29, 2025
Ferroelectric memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12453137B2Oct 21, 2025
Ferroelectric memory devices having improved ferroelectric properties and methods of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12224352B2Feb 11, 2025
Transistor including an active region and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12274070B2Apr 8, 2025
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48