P

Inventor

YAMAZAKI TORU

JP99 patents
⚠️ This page may combine multiple inventors who share the name “YAMAZAKI TORU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NEC CORP

17 patents
US6002161ADec 14, 1999

Semiconductor device having inductor element made of first conductive layer of spiral configuration electrically connected to second conductive layer of insular configuration

NEC CORP164 citations99
US5440152AAug 8, 1995

Heterojunction bipolar transistor having particular Ge distributions and gradients

NEC CORP66 citations96
US5306940AApr 26, 1994

Semiconductor device including a locos type field oxide film and a U trench penetrating the locos film

NEC CORP65 citations96
US6057588AMay 2, 2000

Semiconductor integrated circuit device with digital circuit and analog circuit on common substrate and fabrication process therefor

NEC CORP37 citations93
US5966598AOct 12, 1999

Semiconductor device having an improved trench isolation and method for forming the same

NEC CORP18 citations93
US5955745ASep 21, 1999

Semiconductor device having SiGe spacer under an active layer

NEC CORP20 citations93
US5789769AAug 4, 1998

Semiconductor device having an improved trench isolation

NEC CORP27 citations93
US5600177AFeb 4, 1997

Semiconductor device having an electrically conductive layer including a polycrystalline layer containing an impurity and a metallic silicide layer

NEC CORP20 citations93
US5523606AJun 4, 1996

BiCMOS semiconductor device having SiGe heterojunction and Si homo-junction transistors

NEC CORP52 citations93
US5494846AFeb 27, 1996

Method of manufacturing semiconductor device

NEC CORP36 citations93
US5302841AApr 12, 1994

Heterojunction bipolar transistor

NEC CORP26 citations93
US5880516AMar 9, 1999

Semiconductor device utilizing a pedestal collector region and method of manufacturing the same

NEC CORP13 citations74
US5877539AMar 2, 1999

Bipolar transistor with a reduced collector series resistance

NEC CORP10 citations74
US5714778AFeb 3, 1998

Semiconductor device including memory cell having a capacitance element added to a node of the cell

NEC CORP13 citations74
US5516709AMay 14, 1996

Method of manufacturing bipolar transistor with reduced numbers of steps without increasing collector resistance

NEC CORP12 citations74
US4926069AMay 15, 1990

Bi-MOS circuit capable of high speed operation with low power consumption

NEC CORP18 citations74
US4806797AFeb 21, 1989

bi-CMOS buffer cascaded to CMOS driver having PMOS pull-up transistor with threshold voltage greater than VBE of bi-CMOS bipolar pull-up transistor

NEC CORP11 citations74

NIPPON DENSO CO

7 patents

DENSO CORP

6 patents

KUREHA CHEMICAL IND CO LTD

4 patents

KUREHA CORP

2 patents

FUJITSU LTD

2 patents

HORIBA LTD

2 patents

CITIZEN WATCH CO LTD

1 patent

KONAMI CO LTD

1 patent

PEGASUS SEWING MACHINE MFG LTD

1 patent

SUMCO CORP

1 patent

T RAD CO LTD

1 patent

FUJI PHOTO FILM CO LTD

1 patent

PEGASUS SEWING MACHINE MFG CO

1 patent

HIRATA YOSHIHIRO

1 patent

NIPPON BEARING CO LTD

1 patent

ARAKI NOBUYUKI

1 patent

Showing the top 50 of 99 patents by PatentIndex Score.