Inventor
LIM DONGCHAN
KR6 patents
Patents
6 patentsUS12101923B2Sep 24, 2024
Semiconductor device including gate structure having first portion and second portion and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations57
US11700722B2Jul 11, 2023
Method for manufacturing a semiconductor device using a support layer to form a gate structure
SAMSUNG ELECTRONICS CO LTD0 citations57
US12598984B2Apr 7, 2026
Semiconductor device including conductive structure and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US11764145B2Sep 19, 2023
Wiring structure having double capping structure, manufacturing method thereof, and integrated circuit chip having the same
SAMSUNG ELECTRONICS CO LTD0 citations48
US7939401B2May 10, 2011
Dual gate structure, fabrication method for the same, semiconductor device having the same, and semiconductor device fabrication method
SAMSUNG ELECTRONICS CO LTD0 citations45
US7635897B2Dec 22, 2009
Dual gate structure, fabrication method for the same, semiconductor device having the same
SAMSUNG ELECTRONICS CO LTD1 citations45