Inventor

MALLIKARARJUNASWAMY SHEKAR

US12 patents

⚠️ This page may combine multiple inventors who share the name “MALLIKARARJUNASWAMY SHEKAR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ALPHA & OMEGA SEMICONDUCTOR

7 patents

US7781826B2Aug 24, 2010

Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter

ALPHA & OMEGA SEMICONDUCTOR57 citations97

US7538997B2May 26, 2009

Circuit configurations to reduce snapback of a transient voltage suppressor

ALPHA & OMEGA SEMICONDUCTOR39 citations95

US7956384B2Jun 7, 2011

Closed cell configuration to increase channel density for sub-micron planar semiconductor power device

ALPHA & OMEGA SEMICONDUCTOR15 citations92

US7933102B2Apr 26, 2011

Circuit configurations to reduce snapback of a transient voltage suppressor

ALPHA & OMEGA SEMICONDUCTOR8 citations83

US7602029B2Oct 13, 2009

Configuration and method of manufacturing the one-time programmable (OTP) memory cells

ALPHA & OMEGA SEMICONDUCTOR14 citations83

US7489535B2Feb 10, 2009

Circuit configurations and methods for manufacturing five-volt one time programmable (OTP) memory arrays

ALPHA & OMEGA SEMICONDUCTOR11 citations83

US9647078B2May 9, 2017

Closed cell configuration to increase channel density for sub-micron planar semiconductor power device

ALPHA & OMEGA SEMICONDUCTOR0 citations51

MALLIKARARJUNASWAMY SHEKAR

5 patents

US8338915B2Dec 25, 2012

Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter

MALLIKARARJUNASWAMY SHEKAR30 citations92

US8896093B2Nov 25, 2014

Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter

MALLIKARARJUNASWAMY SHEKAR14 citations83

US8120887B2Feb 21, 2012

MOS transistor triggered transient voltage suppressor to provide circuit protection at a lower voltage

MALLIKARARJUNASWAMY SHEKAR14 citations83

US8067288B2Nov 29, 2011

Configuration and method of manufacturing the one-time programmable (OTP) memory cells

MALLIKARARJUNASWAMY SHEKAR9 citations82

US9147674B2Sep 29, 2015

Closed cell configuration to increase channel density for sub-micron planar semiconductor power device

MALLIKARARJUNASWAMY SHEKAR2 citations61