Inventor
MAETA KENTARO
JP18 patents
⚠️ This page may combine multiple inventors who share the name “MAETA KENTARO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HAMAMATSU PHOTONICS KK
10 patentsUS10573769B2Feb 25, 2020
Backside-illuminated energy ray detection element
HAMAMATSU PHOTONICS KK2 citations72
US8367999B2Feb 5, 2013
Solid state imaging device comprising dummy regions each containing a multiplication register and an amplifier
HAMAMATSU PHOTONICS KK2 citations62
US10930700B2Feb 23, 2021
Semiconductor light detection element
HAMAMATSU PHOTONICS KK0 citations60
US10529772B2Jan 7, 2020
Semiconductor light detection element
HAMAMATSU PHOTONICS KK1 citations60
US10811459B2Oct 20, 2020
Backside incidence type solid-state image pickup device
HAMAMATSU PHOTONICS KK0 citations41
US10483302B2Nov 19, 2019
Solid-state imaging device
HAMAMATSU PHOTONICS KK0 citations41
US10199418B2Feb 5, 2019
Semiconductor photodetection device
HAMAMATSU PHOTONICS KK0 citations41
US8345135B2Jan 1, 2013
Solid-state image sensing device containing electron multiplication function
HAMAMATSU PHOTONICS KK0 citations41
US9305969B2Apr 5, 2016
Solid-state imaging device operable with two readout modes in two different directions coincident with a moving speed and a moving direction of a moving subject
HAMAMATSU PHOTONICS KK0 citations39
US9054000B2Jun 9, 2015
Solid-state imaging device
HAMAMATSU PHOTONICS KK0 citations39
SUZUKI HISANORI
8 patentsUS9609247B2Mar 28, 2017
Solid-state imaging device performing feed-forward control of multiplication factor of multiplication register to match dynamic range of the device with the intensity distribution of incident light
SUZUKI HISANORI2 citations72
US9048164B2Jun 2, 2015
Solid-state image sensing device containing electron multiplication function having N-type floating diffusion (FD) region formed within a P-type well region
SUZUKI HISANORI2 citations62
US8466498B2Jun 18, 2013
Solid state image device having a pair of overflow drains extends along the electron transfer direction at a boundary between channel region and channel stop isolation regions of the multiplication register
SUZUKI HISANORI3 citations62
US8754355B2Jun 17, 2014
Charge multiplying solid state imaging device having multiplication register units with different number of multiplication stages
SUZUKI HISANORI0 citations51
US8520111B2Aug 27, 2013
Solid-state imaging device including a plurality of units each having a corner register
SUZUKI HISANORI0 citations51
US9491384B2Nov 8, 2016
Solid imaging device including photoelectric conversion unit and TDI transfer unit
SUZUKI HISANORI0 citations41
US8599296B2Dec 3, 2013
Charge multiplying solid-state imaging device
SUZUKI HISANORI0 citations41
US8552352B2Oct 8, 2013
Solid-state imaging device including corner register
SUZUKI HISANORI0 citations41