P

Inventor

YANG TSUNG-HSI

TW23 patents
⚠️ This page may combine multiple inventors who share the name “YANG TSUNG-HSI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

15 patents
US10269655B1Apr 23, 2019

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD12 citations90
US10515858B1Dec 24, 2019

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11101347B2Aug 24, 2021

Confined source/drain epitaxy regions and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US11948971B2Apr 2, 2024

Confined source/drain epitaxy regions and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations74
US11581425B2Feb 14, 2023

Method for manufacturing semiconductor structure with enlarged volumes of source-drain regions

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11315837B2Apr 26, 2022

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10879128B2Dec 29, 2020

Semiconductor device and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12389649B2Aug 12, 2025

Transistors with stacked semiconductor layers as channels

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11257908B2Feb 22, 2022

Transistors with stacked semiconductor layers as channels

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11569084B2Jan 31, 2023

Method for manufacturing semiconductor structure with reduced nodule defects

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12057450B2Aug 6, 2024

Epitaxy regions with large landing areas for contact plugs

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11652105B2May 16, 2023

Epitaxy regions with large landing areas for contact plugs

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10770359B2Sep 8, 2020

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12439657B2Oct 7, 2025

Confined source/drain epitaxy regions and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10002780B2Jun 19, 2018

Method of manufacturing a semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

UNIV NAT CHIAO TUNG

2 patents

RICHTEK TECHNOLOGY CORP

2 patents

WITTY MATE CORP

1 patent

YANG TSUNG-HSI

1 patent

HIMAX DISPLAY INC

1 patent

MEDIATEK INC

1 patent