Inventor

MANABE KATSUHIDE

JP39 patents

⚠️ This page may combine multiple inventors who share the name “MANABE KATSUHIDE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MANABE KATSUHIDE

TOYODA GOSEI KK

Gallium nitride group compound semiconductor laser diode

Substrate for growing gallium nitride compound-semiconductor device and light emitting diode

Sapphireless group III nitride semiconductor and method for making same

Light-emitting device of gallium nitride compound semiconductor

Light-emitting device of gallium nitride compound semiconductor

Process of vapor growth of gallium nitride and its apparatus

Light-emitting semiconductor device using group III nitrogen compound

Light-emitting semiconductor device using gallium nitride group compound

Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity

Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities

Light-emitting semiconductor device using gallium nitride group compound

Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device

Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer

Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same

Flexible lustrously metallized resinous articles and a process for manufacturing same

Gallum nitride group compound semiconductor laser diode

Dry etching method for semiconductor

Plasma processing apparatus

Process for the pretreatment of a polyolefin product before coating

Metal-coated fibrous objects

Light emitting semiconductor device using gallium nitride group compound

Colored resinous articles with concealed metallic luster

Corona discharge treating method and apparatus for resin moldings

Plastic articles having on the surface thereof a protected metal film

Light-emitting semiconductor device using group III nitrogen compound

Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity

Gallium nitride group compound semiconductor

Method for producing a light-emitting semiconductor device

Light-emitting semiconductor device using group III nitrogen compound

Method for manufacturing a gallium nitride group compound semiconductor

Light emitting device

AMANO HIROSHI

Method of fabricating a gallium nitride based semiconductor device with an aluminum and nitrogen containing intermediate layer

Gallium nitride base semiconductor device

PIONEER ELECTRONIC CORP

Method for producing a luminous element of III-group nitride

AKASAKI ISAMU

Light emitting semiconductor device using nitrogen-Group III compound

TOYODA GOSEI K K TOYODA SYNTHE

Process for manufacturing plastic articles having on the surface thereof a protected metal film

UNIV NAGOYA

Method for manufacturing a gallium nitride group compound semiconductor

JAPAN SCIENCE & TECH CORP

Light-emitting semiconductor device using gallium nitride group compound

SUZUTORA KK

Contamination resistant fiber sheet