Inventor
CHUNG GIYONG
KR10 patents
Patents
10 patentsUS11114461B2Sep 7, 2021
Three-dimensional semiconductor memory devices having source structure overlaps buried insulating layer
SAMSUNG ELECTRONICS CO LTD2 citations71
US11616078B2Mar 28, 2023
Three-dimensional semiconductor memory devices having a source structure that overlaps a buried insulating layer
SAMSUNG ELECTRONICS CO LTD0 citations60
US12363904B2Jul 15, 2025
Three-dimensional semiconductor memory device and electronic system including the same
SAMSUNG ELECTRONICS CO LTD0 citations59
US12376286B2Jul 29, 2025
Vertical non-volatile memory devices having a multi-stack structure with enhanced photolithographic alignment characteristics
SAMSUNG ELECTRONICS CO LTD0 citations58
US11895827B2Feb 6, 2024
Vertical non-volatile memory devices having a multi-stack structure with enhanced photolithographic alignment characteristics
SAMSUNG ELECTRONICS CO LTD0 citations58
US12185548B2Dec 31, 2024
Semiconductor device having dummy structures in a peripheral region and data storage system including the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US11956965B2Apr 9, 2024
Memory device and electronic system including the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US12490428B2Dec 2, 2025
Semiconductor device including vertical memory structure and separation structure each including side surface slope changing portion and data storage system including the same
SAMSUNG ELECTRONICS CO LTD0 citations49
US11856770B2Dec 26, 2023
Semiconductor device, method of manufacturing the same, and massive data storage system including the same
SAMSUNG ELECTRONICS CO LTD0 citations45
US11844214B2Dec 12, 2023
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations45