Inventor
ASHIDA MOTOI
JP26 patents
⚠️ This page may combine multiple inventors who share the name “ASHIDA MOTOI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS TECH CORP
12 patentsUS7709874B2May 4, 2010
Semiconductor device having a split gate structure with a recessed top face electrode
RENESAS TECH CORP10 citations84
US6853022B2Feb 8, 2005
Semiconductor memory device
RENESAS TECH CORP17 citations82
US7348637B2Mar 25, 2008
Semiconductor device and method of manufacturing the same
RENESAS TECH CORP2 citations63
US7038281B2May 2, 2006
Semiconductor device and method of manufacturing the same
RENESAS TECH CORP2 citations63
US6984859B2Jan 10, 2006
Semiconductor memory device with static memory cells
RENESAS TECH CORP6 citations62
US7816207B2Oct 19, 2010
Semiconductor device having electrode and manufacturing method thereof
RENESAS TECH CORP0 citations52
US7582550B2Sep 1, 2009
Semiconductor memory device and manufacturing method thereof
RENESAS TECH CORP0 citations52
US7485522B2Feb 3, 2009
Method of manufacturing semiconductor device having dual gate electrode
RENESAS TECH CORP0 citations52
US7476581B2Jan 13, 2009
Method of manufacturing semiconductor device having dual gate electrode
RENESAS TECH CORP0 citations52
US7320910B2Jan 22, 2008
Semiconductor device
RENESAS TECH CORP0 citations52
US7145205B2Dec 5, 2006
Semiconductor device
RENESAS TECH CORP0 citations52
US6849484B2Feb 1, 2005
Method of manufacturing semiconductor device
RENESAS TECH CORP1 citations50
MITSUBISHI ELECTRIC CORP
10 patentsUS5952678ASep 14, 1999
SRAM cell with no PN junction between driver and load transistors and method of manufacturing the same
MITSUBISHI ELECTRIC CORP118 citations98
US5283455AFeb 1, 1994
Thin film field effect element having an LDD structure
MITSUBISHI ELECTRIC CORP66 citations96
US5635731AJun 3, 1997
SRAM cell with no PN junction between driver and load transistors and method of manufacturing the same
MITSUBISHI ELECTRIC CORP30 citations92
US5382807AJan 17, 1995
Field effect thin film transistor and static-type semiconductor memory device provided with memory cell having complementary field effect transistor and method of manufacturing the same
MITSUBISHI ELECTRIC CORP22 citations92
US5262655ANov 16, 1993
Thin film field effect device having an LDD structure and a method of manufacturing such a device
MITSUBISHI ELECTRIC CORP41 citations92
US6169313B1Jan 2, 2001
Static semiconductor memory device
MITSUBISHI ELECTRIC CORP35 citations88
US6531747B1Mar 11, 2003
Semiconductor device
MITSUBISHI ELECTRIC CORP15 citations80
US6069818AMay 30, 2000
Semiconductor memory device having storage nodes doped with first and second type impurities
MITSUBISHI ELECTRIC CORP9 citations73
US5973987AOct 26, 1999
Semiconductor memory device delaying ATD pulse signal to generate word line activation signal
MITSUBISHI ELECTRIC CORP8 citations73
US6150685ANov 21, 2000
Semiconductor device with filed-effect transistors of a complementary type and method of manufacturing the same
MITSUBISHI ELECTRIC CORP3 citations62