Inventor
HOLZER JOSEPH C
US29 patents
⚠️ This page may combine multiple inventors who share the name “HOLZER JOSEPH C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MEMC ELECTRONIC MATERIALS
22 patentsUS5919302AJul 6, 1999
Low defect density vacancy dominated silicon
MEMC ELECTRONIC MATERIALS139 citations97
US6409827B2Jun 25, 2002
Low defect density silicon and a process for producing low defect density silicon wherein V/G0 is controlled by controlling heat transfer at the melt/solid interface
MEMC ELECTRONIC MATERIALS30 citations96
US6287380B1Sep 11, 2001
Low defect density silicon
MEMC ELECTRONIC MATERIALS59 citations96
US6254672B1Jul 3, 2001
Low defect density self-interstitial dominated silicon
MEMC ELECTRONIC MATERIALS64 citations96
US6190631B1Feb 20, 2001
Low defect density, ideal oxygen precipitating silicon
MEMC ELECTRONIC MATERIALS40 citations95
US5779791AJul 14, 1998
Process for controlling thermal history of Czochralski-grown silicon
MEMC ELECTRONIC MATERIALS67 citations93
US6632278B2Oct 14, 2003
Low defect density epitaxial wafer and a process for the preparation thereof
MEMC ELECTRONIC MATERIALS16 citations92
US6379642B1Apr 30, 2002
Vacancy dominated, defect-free silicon
MEMC ELECTRONIC MATERIALS21 citations92
US6284039B1Sep 4, 2001
Epitaxial silicon wafers substantially free of grown-in defects
MEMC ELECTRONIC MATERIALS27 citations92
US6409826B2Jun 25, 2002
Low defect density, self-interstitial dominated silicon
MEMC ELECTRONIC MATERIALS17 citations91
US6605150B2Aug 12, 2003
Low defect density regions of self-interstitial dominated silicon
MEMC ELECTRONIC MATERIALS11 citations82
US7442253B2Oct 28, 2008
Process for forming low defect density, ideal oxygen precipitating silicon
MEMC ELECTRONIC MATERIALS6 citations73
US7097718B2Aug 29, 2006
Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects
MEMC ELECTRONIC MATERIALS5 citations73
US6896728B2May 24, 2005
Process for producing low defect density, ideal oxygen precipitating silicon
MEMC ELECTRONIC MATERIALS11 citations73
US6840997B2Jan 11, 2005
Vacancy, dominsated, defect-free silicon
MEMC ELECTRONIC MATERIALS7 citations73
US6565649B2May 20, 2003
Epitaxial wafer substantially free of grown-in defects
MEMC ELECTRONIC MATERIALS9 citations73
US6555194B1Apr 29, 2003
Process for producing low defect density, ideal oxygen precipitating silicon
MEMC ELECTRONIC MATERIALS4 citations73
US5550374AAug 27, 1996
Methods and apparatus for determining interstitial oxygen content of relatively large diameter silicon crystals by infrared spectroscopy
MEMC ELECTRONIC MATERIALS10 citations71
US7229693B2Jun 12, 2007
Low defect density, ideal oxygen precipitating silicon
MEMC ELECTRONIC MATERIALS2 citations62
US6635587B1Oct 21, 2003
Method for producing czochralski silicon free of agglomerated self-interstitial defects
MEMC ELECTRONIC MATERIALS6 citations62
US5573680ANov 12, 1996
Method for etching a semiconductor material without altering flow pattern defect distribution
MEMC ELECTRONIC MATERIALS3 citations60
US7573587B1Aug 11, 2009
Method and device for continuously measuring silicon island elevation
MEMC ELECTRONIC MATERIALS1 citations52