Inventor
MUTTI PAOLO
IT17 patents
Patents
17 patentsUS5919302AJul 6, 1999
Low defect density vacancy dominated silicon
MEMC ELECTRONIC MATERIALS139 citations97
US6254672B1Jul 3, 2001
Low defect density self-interstitial dominated silicon
MEMC ELECTRONIC MATERIALS64 citations96
US6190631B1Feb 20, 2001
Low defect density, ideal oxygen precipitating silicon
MEMC ELECTRONIC MATERIALS40 citations95
US6632278B2Oct 14, 2003
Low defect density epitaxial wafer and a process for the preparation thereof
MEMC ELECTRONIC MATERIALS16 citations92
US6379642B1Apr 30, 2002
Vacancy dominated, defect-free silicon
MEMC ELECTRONIC MATERIALS21 citations92
US6312516B2Nov 6, 2001
Process for preparing defect free silicon crystals which allows for variability in process conditions
MEMC ELECTRONIC MATERIALS25 citations92
US6409826B2Jun 25, 2002
Low defect density, self-interstitial dominated silicon
MEMC ELECTRONIC MATERIALS17 citations91
US6726764B2Apr 27, 2004
Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations
MEMC ELECTRONIC MATERIALS19 citations83
US7442253B2Oct 28, 2008
Process for forming low defect density, ideal oxygen precipitating silicon
MEMC ELECTRONIC MATERIALS6 citations73
US6896728B2May 24, 2005
Process for producing low defect density, ideal oxygen precipitating silicon
MEMC ELECTRONIC MATERIALS11 citations73
US6840997B2Jan 11, 2005
Vacancy, dominsated, defect-free silicon
MEMC ELECTRONIC MATERIALS7 citations73
US6555194B1Apr 29, 2003
Process for producing low defect density, ideal oxygen precipitating silicon
MEMC ELECTRONIC MATERIALS4 citations73
US6500255B2Dec 31, 2002
Process for growing silicon crystals which allows for variability in the process conditions while suppressing the formation of agglomerated intrinsic point defects
MEMC ELECTRONIC MATERIALS5 citations73
US7229693B2Jun 12, 2007
Low defect density, ideal oxygen precipitating silicon
MEMC ELECTRONIC MATERIALS2 citations62
US6986925B2Jan 17, 2006
Single crystal silicon having improved gate oxide integrity
MEMC ELECTRONIC MATERIALS3 citations59
US6652646B2Nov 25, 2003
Process for growing a silicon crystal segment substantially free from agglomerated intrinsic point defects which allows for variability in the process conditions
MEMC ELECTRONIC MATERIALS0 citations51
US7431765B2Oct 7, 2008
Process for preparing single crystal silicon having improved gate oxide integrity
MEMC ELECTRONIC MATERIALS0 citations49