Inventor
JOHNSON BAYARD K
US16 patents
⚠️ This page may combine multiple inventors who share the name “JOHNSON BAYARD K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MEMC ELECTRONIC MATERIALS
13 patentsUS5919302AJul 6, 1999
Low defect density vacancy dominated silicon
MEMC ELECTRONIC MATERIALS139 citations97
US6254672B1Jul 3, 2001
Low defect density self-interstitial dominated silicon
MEMC ELECTRONIC MATERIALS64 citations96
US6190631B1Feb 20, 2001
Low defect density, ideal oxygen precipitating silicon
MEMC ELECTRONIC MATERIALS40 citations95
US6632278B2Oct 14, 2003
Low defect density epitaxial wafer and a process for the preparation thereof
MEMC ELECTRONIC MATERIALS16 citations92
US6379642B1Apr 30, 2002
Vacancy dominated, defect-free silicon
MEMC ELECTRONIC MATERIALS21 citations92
US6409826B2Jun 25, 2002
Low defect density, self-interstitial dominated silicon
MEMC ELECTRONIC MATERIALS17 citations91
US7442253B2Oct 28, 2008
Process for forming low defect density, ideal oxygen precipitating silicon
MEMC ELECTRONIC MATERIALS6 citations73
US6896728B2May 24, 2005
Process for producing low defect density, ideal oxygen precipitating silicon
MEMC ELECTRONIC MATERIALS11 citations73
US6840997B2Jan 11, 2005
Vacancy, dominsated, defect-free silicon
MEMC ELECTRONIC MATERIALS7 citations73
US6555194B1Apr 29, 2003
Process for producing low defect density, ideal oxygen precipitating silicon
MEMC ELECTRONIC MATERIALS4 citations73
US6315828B1Nov 13, 2001
Continuous oxidation process for crystal pulling apparatus
MEMC ELECTRONIC MATERIALS13 citations73
US6039801AMar 21, 2000
Continuous oxidation process for crystal pulling apparatus
MEMC ELECTRONIC MATERIALS14 citations73
US7229693B2Jun 12, 2007
Low defect density, ideal oxygen precipitating silicon
MEMC ELECTRONIC MATERIALS2 citations62