Inventor
TEH YOUNG-WAY
SG25 patents
⚠️ This page may combine multiple inventors who share the name “TEH YOUNG-WAY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CHARTERED SEMICONDUCTOR MFG
8 patentsUS7867835B2Jan 11, 2011
Integrated circuit system for suppressing short channel effects
CHARTERED SEMICONDUCTOR MFG116 citations97
US6406975B1Jun 18, 2002
Method for fabricating an air gap shallow trench isolation (STI) structure
CHARTERED SEMICONDUCTOR MFG84 citations97
US6380106B1Apr 30, 2002
Method for fabricating an air gap metallization scheme that reduces inter-metal capacitance of interconnect structures
CHARTERED SEMICONDUCTOR MFG84 citations97
US7445978B2Nov 4, 2008
Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOS
CHARTERED SEMICONDUCTOR MFG22 citations92
US6649517B2Nov 18, 2003
Copper metal structure for the reduction of intra-metal capacitance
CHARTERED SEMICONDUCTOR MFG31 citations92
US6815823B2Nov 9, 2004
Copper metal structure for the reduction of intra-metal capacitance
CHARTERED SEMICONDUCTOR MFG13 citations84
US7256084B2Aug 14, 2007
Composite stress spacer
CHARTERED SEMICONDUCTOR MFG12 citations83
US7615427B2Nov 10, 2009
Spacer-less low-k dielectric processes
CHARTERED SEMICONDUCTOR MFG3 citations62
IBM
4 patentsUS7759206B2Jul 20, 2010
Methods of forming semiconductor devices using embedded L-shape spacers
IBM118 citations98
US7977185B2Jul 12, 2011
Method and apparatus for post silicide spacer removal
IBM9 citations84
US7785950B2Aug 31, 2010
Dual stress memory technique method and related structure
IBM9 citations84
US7531401B2May 12, 2009
Method for improved fabrication of a semiconductor using a stress proximity technique process
IBM7 citations71
GLOBALFOUNDRIES SG PTE LTD
3 patentsUS7999325B2Aug 16, 2011
Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOS
GLOBALFOUNDRIES SG PTE LTD3 citations62
US7993997B2Aug 9, 2011
Poly profile engineering to modulate spacer induced stress for device enhancement
GLOBALFOUNDRIES SG PTE LTD3 citations62
US12266702B2Apr 1, 2025
Flash memory devices with thickened source/drain silicide
GLOBALFOUNDRIES SG PTE LTD0 citations53