Inventor
MIKI HISAYUKI
JP56 patents
⚠️ This page may combine multiple inventors who share the name “MIKI HISAYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SHOWA DENKO KK
26 patentsUS6268618B1Jul 31, 2001
Electrode for light-emitting semiconductor devices and method of producing the electrode
SHOWA DENKO KK69 citations96
US7612363B2Nov 3, 2009
N-type group III nitride semiconductor stacked layer structure
SHOWA DENKO KK28 citations93
US6403987B1Jun 11, 2002
Electrode for light-emitting semiconductor devices
SHOWA DENKO KK25 citations92
US6326223B1Dec 4, 2001
Electrode for light-emitting semiconductor devices and method of producing the electrode
SHOWA DENKO KK17 citations92
US6852161B2Feb 8, 2005
Method of fabricating group-iii nitride semiconductor crystal, method of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light-emitting device
SHOWA DENKO KK31 citations91
US7498611B2Mar 3, 2009
Transparent electrode for semiconductor light-emitting device
SHOWA DENKO KK23 citations89
US7888687B2Feb 15, 2011
Electrode for semiconductor light emitting device
SHOWA DENKO KK10 citations84
US6800501B2Oct 5, 2004
Electrode for light-emitting semiconductor devices and method of producing the electrode
SHOWA DENKO KK4 citations73
US8049227B2Nov 1, 2011
Group III nitride semiconductor light emitting device, method for producing the same, and lamp thereof
SHOWA DENKO KK2 citations63
US7759690B2Jul 20, 2010
Gallium nitride-based compound semiconductor light-emitting device
SHOWA DENKO KK5 citations63
US7655491B2Feb 2, 2010
P-type Group III nitride semiconductor and production method thereof
SHOWA DENKO KK2 citations63
US7601979B2Oct 13, 2009
Gallium nitride-based compound semiconductor multilayer structure and production method thereof
SHOWA DENKO KK6 citations63
US7585690B2Sep 8, 2009
Process for producing group III nitride compound semiconductor light emitting device, group III nitride compound semiconductor light emitting device and lamp
SHOWA DENKO KK2 citations63
US7521777B2Apr 21, 2009
Gallium nitride-based compound semiconductor multilayer structure and production method thereof
SHOWA DENKO KK2 citations63
US8608980B2Dec 17, 2013
Phosphor, method for producing the same and light-emitting device using the same
SHOWA DENKO KK3 citations62
US8012784B2Sep 6, 2011
Method for producing group III nitride semiconductor light emitting device, group III nitride semiconductor light emitting device, and lamp
SHOWA DENKO KK5 citations62
US7867801B2Jan 11, 2011
Apparatus for producing group-III nitride semiconductor layer, method of producing group-III nitride semiconductor layer, method of producing group-III nitride semiconductor light-emitting device, group-III nitride semiconductor light-emitting device thereof, and lamp thereof
SHOWA DENKO KK4 citations62
US7749785B2Jul 6, 2010
Manufacturing method of group III nitride semiconductor light-emitting device
SHOWA DENKO KK4 citations62
US7482635B2Jan 27, 2009
Gallium nitride-based compound semiconductor multilayer structure and production method thereof
SHOWA DENKO KK4 citations62
US7057210B2Jun 6, 2006
Electrode for light-emitting semiconductor devices and method of producing the electrode
SHOWA DENKO KK2 citations62
US7436045B2Oct 14, 2008
Gallium nitride-based semiconductor device
SHOWA DENKO KK2 citations61
US7855386B2Dec 21, 2010
N-type group III nitride semiconductor layered structure
SHOWA DENKO KK2 citations60
US7498184B2Mar 3, 2009
Production method for semiconductor device
SHOWA DENKO KK3 citations59
US7847314B2Dec 7, 2010
Gallium nitride-based compound semiconductor light-emitting device
SHOWA DENKO KK0 citations52
US8383439B2Feb 26, 2013
Apparatus for manufacturing group-III nitride semiconductor layer, method of manufacturing group-III nitride semiconductor layer, group-III nitride semiconductor light-emitting device, method of manufacturing group-III nitride semiconductor light-emitting device, and lamp
SHOWA DENKO KK0 citations51
US7858419B2Dec 28, 2010
Gallium nitride-based compound semiconductor multilayer structure and production method thereof
SHOWA DENKO KK0 citations51
MIKI HISAYUKI
11 patentsUS8168460B2May 1, 2012
Method for manufacturing group III nitride compound semiconductor light-emitting device, group III nitride compound semiconductor light-emitting device, and lamp
MIKI HISAYUKI8 citations84
US8115212B2Feb 14, 2012
Positive electrode for semiconductor light-emitting device
MIKI HISAYUKI10 citations83
US8642992B2Feb 4, 2014
Group III nitride compound semiconductor light emitting device
MIKI HISAYUKI4 citations73
US8669129B2Mar 11, 2014
Method for producing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp
MIKI HISAYUKI6 citations72
US8550645B2Oct 8, 2013
Illumination device for display device, and display device
MIKI HISAYUKI5 citations72
US8882971B2Nov 11, 2014
Sputtering apparatus and manufacturing method of semiconductor light-emitting element
MIKI HISAYUKI2 citations62
US8569794B2Oct 29, 2013
Group III nitride semiconductor device and method for manufacturing the same, group III nitride semiconductor light-emitting device and method for manufacturing the same, and lamp
MIKI HISAYUKI4 citations62
US8389313B2Mar 5, 2013
Deposition method of III group nitride compound semiconductor laminated structure
MIKI HISAYUKI3 citations62
US8227284B2Jul 24, 2012
Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp
MIKI HISAYUKI2 citations62
US8148712B2Apr 3, 2012
Group III nitride compound semiconductor stacked structure
MIKI HISAYUKI2 citations62
US8557092B2Oct 15, 2013
Sputtering deposition apparatus and backing plate for use in sputtering deposition apparatus
MIKI HISAYUKI0 citations52
YOKOYAMA YASUNORI
5 patentsUS8765507B2Jul 1, 2014
Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp
YOKOYAMA YASUNORI2 citations61
US8106419B2Jan 31, 2012
Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp
YOKOYAMA YASUNORI2 citations61
US8080484B2Dec 20, 2011
Method for manufacturing group III nitride semiconductor layer, method for manufacturing group III nitride semiconductor light-emitting device, and group III nitride semiconductor light-emitting device, and lamp
YOKOYAMA YASUNORI2 citations61
US9040319B2May 26, 2015
Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp
YOKOYAMA YASUNORI0 citations51
US8227359B2Jul 24, 2012
Method for manufacturing group III nitride semiconductor layer, method for manufacturing group III nitride semiconductor light-emitting device, and group III nitride semiconductor light-emitting device, and lamp
YOKOYAMA YASUNORI0 citations51
SHIOI KOUSUKE
1 patentSASAKI YASUMASA
1 patentSUGANO SUSUMU
1 patentORIJI GAKU
1 patentHANAWA KENZO
1 patentSHOWA DENKA K K
1 patentKAJI HIROAKI
1 patentTOYODA GOSEI KK
1 patentShowing the top 50 of 56 patents by PatentIndex Score.