Inventor
KITABATAKE MAKOTO
JP74 patents
⚠️ This page may combine multiple inventors who share the name “KITABATAKE MAKOTO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
36 patentsUS6110813AAug 29, 2000
Method for forming an ohmic electrode
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD170 citations99
US5814194ASep 29, 1998
Substrate surface treatment method
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD134 citations99
US6995397B2Feb 7, 2006
Semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD114 citations98
US6306211B1Oct 23, 2001
Method for growing semiconductor film and method for fabricating semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD84 citations98
US6274889B1Aug 14, 2001
Method for forming ohmic electrode, and semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD109 citations98
US6228720B1May 8, 2001
Method for making insulated-gate semiconductor element
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD120 citations98
US6400091B1Jun 4, 2002
Electron emission element and image output device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD106 citations97
US6989553B2Jan 24, 2006
Semiconductor device having an active region of alternating layers
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD44 citations96
US6323053B1Nov 27, 2001
Growth of GaN on Si substrate using GaSe buffer layer
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD62 citations96
US6214107B1Apr 10, 2001
Method for manufacturing a SiC device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD81 citations96
US6207282B1Mar 27, 2001
Substrate surface treatment method
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD62 citations96
US4877677AOct 31, 1989
Wear-protected device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD118 citations95
US7230273B2Jun 12, 2007
Semiconductor device with a plurality of semiconductor elements each including a wide band-gap semiconductor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD24 citations93
US7126169B2Oct 24, 2006
Semiconductor element
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD32 citations93
US6995396B2Feb 7, 2006
Semiconductor substrate, semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD25 citations93
US6864507B2Mar 8, 2005
Misfet
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD17 citations93
US6690035B1Feb 10, 2004
Semiconductor device having an active region of alternating layers
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD30 citations93
US6674131B2Jan 6, 2004
Semiconductor power device for high-temperature applications
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD23 citations93
US6654604B2Nov 25, 2003
Equipment for communication system
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD28 citations93
US6617653B1Sep 9, 2003
Misfet
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD30 citations93
US6273950B1Aug 14, 2001
SiC device and method for manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD39 citations93
US6270573B1Aug 7, 2001
Silicon carbide substrate, and method for producing the substrate, and semiconductor device utilizing the substrate
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD42 citations93
US5328855AJul 12, 1994
Formation of semiconductor diamond
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD27 citations93
US4844785AJul 4, 1989
Method for deposition of hard carbon film
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD34 citations93
US6692327B1Feb 17, 2004
Method for producing electron emitting element
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD52 citations92
US6645402B1Nov 11, 2003
Electron emitting device, electron emitting source, image display, and method for producing them
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD30 citations92
US6577386B2Jun 10, 2003
Method and apparatus for activating semiconductor impurities
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD16 citations92
US6350999B1Feb 26, 2002
Electron-emitting device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD20 citations92
US6255201B1Jul 3, 2001
Method and device for activating semiconductor impurities
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD23 citations92
US6008502ADec 28, 1999
Diamond electron emitting device having an insulative electron supply layer
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD28 citations89
US7217954B2May 15, 2007
Silicon carbide semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations84
US6940110B2Sep 6, 2005
SiC-MISFET and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations84
US6940127B2Sep 6, 2005
Equipment for communication system and semiconductor integrated circuit device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations84
US6580125B2Jun 17, 2003
Semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations84
US6504176B2Jan 7, 2003
Field effect transistor and method of manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations84
US6635979B1Oct 21, 2003
Electron emitting device, method of producing the same, and method of driving the same; and image display comprising the electron emitting device and method of producing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations74
PANASONIC CORP
10 patentsUS8350549B2Jan 8, 2013
Converter with switches having a diode region that is unipolar-conductive only in the reverse direction
PANASONIC CORP77 citations98
US7507999B2Mar 24, 2009
Semiconductor device and method for manufacturing same
PANASONIC CORP133 citations98
US7473929B2Jan 6, 2009
Semiconductor device and method for fabricating the same
PANASONIC CORP23 citations92
US8363440B2Jan 29, 2013
Power conversion circuit having off-voltage control circuit
PANASONIC CORP10 citations84
US7791308B2Sep 7, 2010
Semiconductor element and electrical apparatus
PANASONIC CORP14 citations84
US7786565B2Aug 31, 2010
Semiconductor apparatus including power semiconductor device constructed by using wide band gap semiconductor
PANASONIC CORP8 citations84
US7709403B2May 4, 2010
Silicon carbide-oxide layered structure, production method thereof, and semiconductor device
PANASONIC CORP11 citations84
US7671409B2Mar 2, 2010
Wide gap semiconductor power device with temperature independent resistivity due to channel region resistivity having negative temperature dependence
PANASONIC CORP18 citations84
US7521786B2Apr 21, 2009
Sustaining circuit with bi-directional device
PANASONIC CORP8 citations84
US7462540B2Dec 9, 2008
Silicon carbide semiconductor device and process for producing the same
PANASONIC CORP7 citations74
KAZAMA SHUN
2 patentsMATUSHITA ELECTRIC IND CO LTD
1 patentTAGOME MASAKI
1 patentShowing the top 50 of 74 patents by PatentIndex Score.