P

Inventor

KITABATAKE MAKOTO

JP74 patents
⚠️ This page may combine multiple inventors who share the name “KITABATAKE MAKOTO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

36 patents
US6110813AAug 29, 2000

Method for forming an ohmic electrode

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD170 citations99
US5814194ASep 29, 1998

Substrate surface treatment method

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD134 citations99
US6995397B2Feb 7, 2006

Semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD114 citations98
US6306211B1Oct 23, 2001

Method for growing semiconductor film and method for fabricating semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD84 citations98
US6274889B1Aug 14, 2001

Method for forming ohmic electrode, and semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD109 citations98
US6228720B1May 8, 2001

Method for making insulated-gate semiconductor element

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD120 citations98
US6400091B1Jun 4, 2002

Electron emission element and image output device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD106 citations97
US6989553B2Jan 24, 2006

Semiconductor device having an active region of alternating layers

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD44 citations96
US6323053B1Nov 27, 2001

Growth of GaN on Si substrate using GaSe buffer layer

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD62 citations96
US6214107B1Apr 10, 2001

Method for manufacturing a SiC device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD81 citations96
US6207282B1Mar 27, 2001

Substrate surface treatment method

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD62 citations96
US4877677AOct 31, 1989

Wear-protected device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD118 citations95
US7230273B2Jun 12, 2007

Semiconductor device with a plurality of semiconductor elements each including a wide band-gap semiconductor

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD24 citations93
US7126169B2Oct 24, 2006

Semiconductor element

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD32 citations93
US6995396B2Feb 7, 2006

Semiconductor substrate, semiconductor device and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD25 citations93
US6864507B2Mar 8, 2005

Misfet

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD17 citations93
US6690035B1Feb 10, 2004

Semiconductor device having an active region of alternating layers

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD30 citations93
US6674131B2Jan 6, 2004

Semiconductor power device for high-temperature applications

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD23 citations93
US6654604B2Nov 25, 2003

Equipment for communication system

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD28 citations93
US6617653B1Sep 9, 2003

Misfet

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD30 citations93
US6273950B1Aug 14, 2001

SiC device and method for manufacturing the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD39 citations93
US6270573B1Aug 7, 2001

Silicon carbide substrate, and method for producing the substrate, and semiconductor device utilizing the substrate

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD42 citations93
US5328855AJul 12, 1994

Formation of semiconductor diamond

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD27 citations93
US4844785AJul 4, 1989

Method for deposition of hard carbon film

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD34 citations93
US6692327B1Feb 17, 2004

Method for producing electron emitting element

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD52 citations92
US6645402B1Nov 11, 2003

Electron emitting device, electron emitting source, image display, and method for producing them

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD30 citations92
US6577386B2Jun 10, 2003

Method and apparatus for activating semiconductor impurities

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD16 citations92
US6350999B1Feb 26, 2002

Electron-emitting device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD20 citations92
US6255201B1Jul 3, 2001

Method and device for activating semiconductor impurities

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD23 citations92
US6008502ADec 28, 1999

Diamond electron emitting device having an insulative electron supply layer

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD28 citations89
US7217954B2May 15, 2007

Silicon carbide semiconductor device and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations84
US6940110B2Sep 6, 2005

SiC-MISFET and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations84
US6940127B2Sep 6, 2005

Equipment for communication system and semiconductor integrated circuit device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations84
US6580125B2Jun 17, 2003

Semiconductor device and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations84
US6504176B2Jan 7, 2003

Field effect transistor and method of manufacturing the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations84
US6635979B1Oct 21, 2003

Electron emitting device, method of producing the same, and method of driving the same; and image display comprising the electron emitting device and method of producing the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations74

PANASONIC CORP

10 patents

KAZAMA SHUN

2 patents

MATUSHITA ELECTRIC IND CO LTD

1 patent

TAGOME MASAKI

1 patent

Showing the top 50 of 74 patents by PatentIndex Score.