Inventor
VAN CLEEMPUT PATRICK A
US43 patents
⚠️ This page may combine multiple inventors who share the name “VAN CLEEMPUT PATRICK A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LAM RES CORP
30 patentsUS9824893B1Nov 21, 2017
Tin oxide thin film spacers in semiconductor device manufacturing
LAM RES CORP442 citations98
US9773643B1Sep 26, 2017
Apparatus and method for deposition and etch in gap fill
LAM RES CORP41 citations96
US11088019B2Aug 10, 2021
Method to create air gaps
LAM RES CORP17 citations94
US11031245B2Jun 8, 2021
Tin oxide thin film spacers in semiconductor device manufacturing
LAM RES CORP21 citations94
US10777453B2Sep 15, 2020
Low resistivity films containing molybdenum
LAM RES CORP18 citations93
US10510590B2Dec 17, 2019
Low resistivity films containing molybdenum
LAM RES CORP26 citations93
US10373806B2Aug 6, 2019
Apparatus and method for deposition and etch in gap fill
LAM RES CORP17 citations93
US11784047B2Oct 10, 2023
Tin oxide thin film spacers in semiconductor device manufacturing
LAM RES CORP10 citations86
US12148623B2Nov 19, 2024
Deposition of tungsten on molybdenum templates
LAM RES CORP6 citations85
US12074029B2Aug 27, 2024
Molybdenum deposition
LAM RES CORP8 citations85
US11970776B2Apr 30, 2024
Atomic layer deposition of metal films
LAM RES CORP9 citations85
US10262943B2Apr 16, 2019
Interlevel conductor pre-fill utilizing selective barrier deposition
LAM RES CORP7 citations83
US9583386B2Feb 28, 2017
Interlevel conductor pre-fill utilizing selective barrier deposition
LAM RES CORP8 citations83
US10049921B2Aug 14, 2018
Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor
LAM RES CORP15 citations82
US9916977B2Mar 13, 2018
Low k dielectric deposition via UV driven photopolymerization
LAM RES CORP7 citations82
US9245739B2Jan 26, 2016
Low-K oxide deposition by hydrolysis and condensation
LAM RES CORP14 citations81
US12112980B2Oct 8, 2024
Method to create air gaps
LAM RES CORP4 citations75
US12051589B2Jul 30, 2024
Tin oxide thin film spacers in semiconductor device manufacturing
LAM RES CORP6 citations75
US12351914B2Jul 8, 2025
Deposition of films using molybdenum precursors
LAM RES CORP2 citations74
US10128116B2Nov 13, 2018
Integrated direct dielectric and metal deposition
LAM RES CORP2 citations73
US12334351B2Jun 17, 2025
Molybdenum deposition
LAM RES CORP3 citations72
US10957514B2Mar 23, 2021
Apparatus and method for deposition and etch in gap fill
LAM RES CORP4 citations72
US9875968B2Jan 23, 2018
Interlevel conductor pre-fill utilizing selective barrier deposition
LAM RES CORP2 citations72
US12474640B2Nov 18, 2025
Integration of dry development and etch processes for EUV patterning in a single process chamber
LAM RES CORP4 citations71
US12327762B2Jun 10, 2025
Molybdenum fill
LAM RES CORP3 citations71
US10615169B2Apr 7, 2020
Selective deposition of SiN on horizontal surfaces
LAM RES CORP5 citations71
US10388546B2Aug 20, 2019
Apparatus for UV flowable dielectric
LAM RES CORP2 citations70
US12203168B2Jan 21, 2025
Metal deposition
LAM RES CORP1 citations60
US11270896B2Mar 8, 2022
Apparatus for UV flowable dielectric
LAM RES CORP1 citations60
US12553131B2Feb 17, 2026
Deposition of molybdenum
LAM RES CORP0 citations57
NOVELLUS SYSTEMS INC
12 patentsUS6395150B1May 28, 2002
Very high aspect ratio gapfill using HDP
NOVELLUS SYSTEMS INC444 citations99
US6030881AFeb 29, 2000
High throughput chemical vapor deposition process capable of filling high aspect ratio structures
NOVELLUS SYSTEMS INC575 citations99
US5872058AFeb 16, 1999
High aspect ratio gapfill process by using HDP
NOVELLUS SYSTEMS INC426 citations99
US7208389B1Apr 24, 2007
Method of porogen removal from porous low-k films using UV radiation
NOVELLUS SYSTEMS INC602 citations98
US6340628B1Jan 22, 2002
Method to deposit SiOCH films with dielectric constant below 3.0
NOVELLUS SYSTEMS INC166 citations98
US7176144B1Feb 13, 2007
Plasma detemplating and silanol capping of porous dielectric films
NOVELLUS SYSTEMS INC128 citations97
US6576345B1Jun 10, 2003
Dielectric films with low dielectric constants
NOVELLUS SYSTEMS INC110 citations97
US6550484B1Apr 22, 2003
Apparatus for maintaining wafer back side and edge exclusion during supercritical fluid processing
NOVELLUS SYSTEMS INC91 citations97
US6867152B1Mar 15, 2005
Properties of a silica thin film produced by a rapid vapor deposition (RVD) process
NOVELLUS SYSTEMS INC83 citations96
US6766810B1Jul 27, 2004
Methods and apparatus to control pressure in a supercritical fluid reactor
NOVELLUS SYSTEMS INC59 citations96
US6951765B1Oct 4, 2005
Method and apparatus for introduction of solid precursors and reactants into a supercritical fluid reactor
NOVELLUS SYSTEMS INC28 citations91
US6149779ANov 21, 2000
Low-k BSG gap fill process using HDP
NOVELLUS SYSTEMS INC17 citations84