P

Inventor

VAN SCHRAVENDIJK BART J

US65 patents
⚠️ This page may combine multiple inventors who share the name “VAN SCHRAVENDIJK BART J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LAM RES CORP

37 patents
US9875891B2Jan 23, 2018

Selective inhibition in atomic layer deposition of silicon-containing films

LAM RES CORP478 citations99
US9564312B2Feb 7, 2017

Selective inhibition in atomic layer deposition of silicon-containing films

LAM RES CORP415 citations99
US9257274B2Feb 9, 2016

Gapfill of variable aspect ratio features with a composite PEALD and PECVD method

LAM RES CORP523 citations99
US9824893B1Nov 21, 2017

Tin oxide thin film spacers in semiconductor device manufacturing

LAM RES CORP442 citations98
US9773643B1Sep 26, 2017

Apparatus and method for deposition and etch in gap fill

LAM RES CORP41 citations96
US11088019B2Aug 10, 2021

Method to create air gaps

LAM RES CORP17 citations94
US11031245B2Jun 8, 2021

Tin oxide thin film spacers in semiconductor device manufacturing

LAM RES CORP21 citations94
US10361076B2Jul 23, 2019

Gapfill of variable aspect ratio features with a composite PEALD and PECVD method

LAM RES CORP17 citations94
US10002787B2Jun 19, 2018

Staircase encapsulation in 3D NAND fabrication

LAM RES CORP28 citations94
US9793110B2Oct 17, 2017

Gapfill of variable aspect ratio features with a composite PEALD and PECVD method

LAM RES CORP25 citations94
US11183383B2Nov 23, 2021

Tin oxide thin film spacers in semiconductor device manufacturing

LAM RES CORP16 citations93
US10373806B2Aug 6, 2019

Apparatus and method for deposition and etch in gap fill

LAM RES CORP17 citations93
US9828672B2Nov 28, 2017

Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma

LAM RES CORP25 citations93
US9190489B1Nov 17, 2015

Sacrificial pre-metal dielectric for self-aligned contact scheme

LAM RES CORP31 citations93
US10062563B2Aug 28, 2018

Selective atomic layer deposition with post-dose treatment

LAM RES CORP16 citations92
US10157736B2Dec 18, 2018

Methods of encapsulation

LAM RES CORP13 citations91
US11784047B2Oct 10, 2023

Tin oxide thin film spacers in semiconductor device manufacturing

LAM RES CORP10 citations86
US10804099B2Oct 13, 2020

Selective inhibition in atomic layer deposition of silicon-containing films

LAM RES CORP13 citations86
US10580690B2Mar 3, 2020

Staircase encapsulation in 3D NAND fabrication

LAM RES CORP15 citations86
US11637037B2Apr 25, 2023

Method to create air gaps

LAM RES CORP12 citations85
US11133180B2Sep 28, 2021

Gapfill of variable aspect ratio features with a composite PEALD and PECVD method

LAM RES CORP6 citations84
US10679848B2Jun 9, 2020

Selective atomic layer deposition with post-dose treatment

LAM RES CORP10 citations84
US11049716B2Jun 29, 2021

Gap fill using carbon-based films

LAM RES CORP11 citations83
US10763108B2Sep 1, 2020

Geometrically selective deposition of a dielectric film

LAM RES CORP9 citations83
US10566186B2Feb 18, 2020

Methods of encapsulation

LAM RES CORP9 citations83
US9847222B2Dec 19, 2017

Treatment for flowable dielectric deposition on substrate surfaces

LAM RES CORP15 citations83
US9379210B2Jun 28, 2016

Sacrificial pre-metal dielectric for self-aligned contact scheme

LAM RES CORP7 citations83
US10049921B2Aug 14, 2018

Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor

LAM RES CORP15 citations82
US12261038B2Mar 25, 2025

Gapfill of variable aspect ratio features with a composite PEALD and PECVD method

LAM RES CORP1 citations75
US12112980B2Oct 8, 2024

Method to create air gaps

LAM RES CORP4 citations75
US12051589B2Jul 30, 2024

Tin oxide thin film spacers in semiconductor device manufacturing

LAM RES CORP6 citations75
US11920239B2Mar 5, 2024

Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma

LAM RES CORP3 citations74
US10128116B2Nov 13, 2018

Integrated direct dielectric and metal deposition

LAM RES CORP2 citations73
US10957514B2Mar 23, 2021

Apparatus and method for deposition and etch in gap fill

LAM RES CORP4 citations72
US10192759B2Jan 29, 2019

Image reversal with AHM gap fill for multiple patterning

LAM RES CORP4 citations72
US12040181B2Jul 16, 2024

Modulated atomic layer deposition

LAM RES CORP4 citations71
US10763107B2Sep 1, 2020

Methods of encapsulation

LAM RES CORP3 citations71

NOVELLUS SYSTEMS INC

11 patents

LAVOIE ADRIEN

1 patent

SWAMINATHAN SHANKAR

1 patent

Showing the top 50 of 65 patents by PatentIndex Score.