Inventor

NAM BYEONG-YUN

KR27 patents

⚠️ This page may combine multiple inventors who share the name “NAM BYEONG-YUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NAM BYEONG-YUN

SAMSUNG ELECTRONICS CO LTD

Semiconductor memory device having self-aligned contacts and method of fabricating the same

Semiconductor memory device having self-aligned contact and fabricating method thereof

Methods for forming conductive contact body for integrated circuits using dummy dielectric layer

Methods of etching platinum group metal film and forming lower electrode of capacitor

Method for etching Pt film of semiconductor device

Method for etching a platinum layer in a semiconductor device

Methods of forming field effect transistors having recessed channel regions

Methods of manufacturing integrated circuit devices having reduced contact resistance between a substrate and a contact pad while maintaining separation of the substrate and the contact pad and integrated circuit devices formed thereby

Methods of fabricating integrated circuit devices providing improved short prevention

Methods of manufacturing integrated circuit devices having reduced contact resistance between a substrate and a contact pad while maintaining separation of the substrate and the contact pad

Integrated circuit devices providing improved short prevention

Semiconductor device having transistor

Method for forming conductive contact of semiconductor device

Methods of forming thin film transistors having lightly-doped drain and source regions therein

Method of etching a metal layer using a mask, a metallization method for a semiconductor device, a method of etching a metal layer, and an etching gas

Semiconductor memory device having self-aligned contacts and method of fabricating the same

Methods for forming patterned platinum layers using masking layers including titanium and related structures

Methods of forming capacitor structures including L-shaped cavities

Method of forming capacitor for semiconductor device

Method of manufacturing self-aligned contact hole

Semiconductor memory device having multi-layered storage node contact plug and method for fabricating the same

Semiconductor memory device having multilayered storage node contact plug and method for fabricating the same

Methods of forming semiconductor devices with extended active regions

Methods of forming capacitor electrodes using fluorine and oxygen

Semiconductor device having transistor and method of manufacturing the same

Semiconductor memory device having self-aligned contact and fabricating method thereof

PARK ZIN-TAEK

Display substrate and method of manufacturing the same