Inventor
PARK JAE EON
KR10 patents
⚠️ This page may combine multiple inventors who share the name “PARK JAE EON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
6 patentsUS7534678B2May 19, 2009
Methods of forming CMOS integrated circuit devices having stressed NMOS and PMOS channel regions therein and circuits formed thereby
SAMSUNG ELECTRONICS CO LTD20 citations92
US7297584B2Nov 20, 2007
Methods of fabricating semiconductor devices having a dual stress liner
SAMSUNG ELECTRONICS CO LTD34 citations91
US7800134B2Sep 21, 2010
CMOS integrated circuit devices having stressed NMOS and PMOS channel regions therein
SAMSUNG ELECTRONICS CO LTD4 citations62
US7541288B2Jun 2, 2009
Methods of forming integrated circuit structures using insulator deposition and insulator gap filling techniques
SAMSUNG ELECTRONICS CO LTD2 citations62
US7323419B2Jan 29, 2008
Method of fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations62
US7838390B2Nov 23, 2010
Methods of forming integrated circuit devices having ion-cured electrically insulating layers therein
SAMSUNG ELECTRONICS CO LTD4 citations60
ENTEGRIS INC
4 patentsUS12071688B2Aug 27, 2024
Precursors and methods for preparing silicon-containing films
ENTEGRIS INC0 citations60
US12037681B2Jul 16, 2024
Method for forming carbon rich silicon-containing films
ENTEGRIS INC0 citations59
US11414750B2Aug 16, 2022
Method for forming carbon rich silicon-containing films
ENTEGRIS INC0 citations59
US12264392B2Apr 1, 2025
Silicon precursor compounds and method for forming silicon-containing films
ENTEGRIS INC0 citations49