Inventor
NAKATA KEN
JP39 patents
⚠️ This page may combine multiple inventors who share the name “NAKATA KEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SUMITOMO ELECTRIC INDUSTRIES
14 patentsUS10147811B2Dec 4, 2018
Process of forming a high electron mobility transistor (HEMT)
SUMITOMO ELECTRIC INDUSTRIES3 citations73
US9123534B2Sep 1, 2015
Semiconductor device and method of manufacturing the same
SUMITOMO ELECTRIC INDUSTRIES4 citations71
US11935744B2Mar 19, 2024
Method for manufacturing nitride semiconductor device
SUMITOMO ELECTRIC INDUSTRIES0 citations62
US10943999B2Mar 9, 2021
Field effect transistor and process of forming the same
SUMITOMO ELECTRIC INDUSTRIES0 citations62
US10263094B2Apr 16, 2019
Nitride semiconductor device and process of forming the same
SUMITOMO ELECTRIC INDUSTRIES1 citations62
US10580887B2Mar 3, 2020
Field effect transistor and process of forming the same
SUMITOMO ELECTRIC INDUSTRIES0 citations52
US10211323B2Feb 19, 2019
Hemt having heavily doped N-type regions and process of forming the same
SUMITOMO ELECTRIC INDUSTRIES0 citations52
US9865720B2Jan 9, 2018
High electron-mobility transistor
SUMITOMO ELECTRIC INDUSTRIES1 citations52
US9685548B2Jun 20, 2017
High electron mobility transistor and method of forming the same using atomic layer deposition technique
SUMITOMO ELECTRIC INDUSTRIES0 citations52
US9437725B2Sep 6, 2016
Semiconductor device and semiconductor substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations52
US10038086B2Jul 31, 2018
Process for forming a high electron mobility transistor
SUMITOMO ELECTRIC INDUSTRIES1 citations50
US9355843B2May 31, 2016
Semiconductor device and method of manufacturing the same
SUMITOMO ELECTRIC INDUSTRIES0 citations50
US9159821B2Oct 13, 2015
Nitride semiconductor device with limited instantaneous current reduction
SUMITOMO ELECTRIC INDUSTRIES0 citations50
US9029873B2May 12, 2015
Semiconductor device including an aluminum nitride layer having a calculated area-averaged circularity and a method of manufacturing the device
SUMITOMO ELECTRIC INDUSTRIES0 citations40
NAKATA KEN
6 patentsUS8629479B2Jan 14, 2014
Semiconductor device
NAKATA KEN8 citations82
US8754419B2Jun 17, 2014
Semiconductor device
NAKATA KEN2 citations60
US8742426B2Jun 3, 2014
Semiconductor device
NAKATA KEN2 citations60
US8748274B2Jun 10, 2014
Method for fabricating semiconductor device
NAKATA KEN1 citations51
US9701937B2Jul 11, 2017
Carrier for cultivation of cells
NAKATA KEN0 citations41
US7968335B2Jun 28, 2011
Cell culturing method using biomechanical stimulation loading and system therefor
NAKATA KEN0 citations41
EUDYNA DEVICES INC
5 patentsUS7592647B2Sep 22, 2009
Semiconductor device and manufacturing method thereof
EUDYNA DEVICES INC32 citations92
US8044433B2Oct 25, 2011
GaN-based high electron mobility transistor (HEMT) with an embedded gate electrode having a first recess portion and a second recess portion to improve drain breakdown voltage
EUDYNA DEVICES INC10 citations84
US7723751B2May 25, 2010
Semiconductor device and fabrication method of the same
EUDYNA DEVICES INC9 citations84
US7521707B2Apr 21, 2009
Semiconductor device having GaN-based semiconductor layer
EUDYNA DEVICES INC12 citations84
US7728353B2Jun 1, 2010
Semiconductor device in which GaN-based semiconductor layer is selectively formed
EUDYNA DEVICES INC1 citations52
SEDI INC
4 patentsUS11557668B2Jan 17, 2023
High electron mobility transistor with reverse arrangement of channel layer and barrier layer
SEDI INC0 citations62
US10971614B2Apr 6, 2021
High electron mobility transistor with reverse arrangement of channel layer and barrier layer
SEDI INC0 citations62
US10790385B2Sep 29, 2020
High electron mobility transistor with reverse arrangement of channel layer and barrier layer
SEDI INC0 citations52
US7947578B2May 24, 2011
Method for fabricating semiconductor device
SEDI INC1 citations50