Inventor
WONG HON-SUM PHILIP
US47 patents
⚠️ This page may combine multiple inventors who share the name “WONG HON-SUM PHILIP”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
30 patentsUS7465973B2Dec 16, 2008
Integrated circuit having gates and active regions forming a regular grating
IBM206 citations99
US7402848B2Jul 22, 2008
Integrated circuit having gates and active regions forming a regular grating
IBM131 citations99
US6891227B2May 10, 2005
Self-aligned nanotube field effect transistor and method of fabricating same
IBM178 citations99
US5773331AJun 30, 1998
Method for making single and double gate field effect transistors with sidewall source-drain contacts
IBM192 citations99
US5708263AJan 13, 1998
Photodetector array
IBM158 citations99
US6524935B1Feb 25, 2003
Preparation of strained Si/SiGe on insulator by hydrogen induced layer transfer technique
IBM250 citations98
US6344877B1Feb 5, 2002
Image sensor with dummy pixel or dummy pixel array
IBM252 citations98
US6115066ASep 5, 2000
Image sensor with direct digital correlated sampling
IBM225 citations98
US5920274AJul 6, 1999
Image sensor employing non-uniform A/D conversion
IBM221 citations98
US5898168AApr 27, 1999
Image sensor pixel circuit
IBM193 citations98
US5877715AMar 2, 1999
Correlated double sampling with up/down counter
IBM365 citations98
US7485891B2Feb 3, 2009
Multi-bit phase change memory cell and multi-bit phase change memory including the same, method of forming a multi-bit phase change memory, and method of programming a multi-bit phase change memory
IBM125 citations97
US6628333B1Sep 30, 2003
Digital instant camera having a printer
IBM183 citations96
US5646058AJul 8, 1997
Method for fabricating a self-aligned double-gate MOSFET by selective lateral epitaxy
IBM93 citations96
US7319608B2Jan 15, 2008
Non-volatile content addressable memory using phase-change-material memory elements
IBM27 citations93
US6466489B1Oct 15, 2002
Use of source/drain asymmetry MOSFET devices in dynamic and analog circuits
IBM108 citations93
US7897960B2Mar 1, 2011
Self-aligned nanotube field effect transistor
IBM10 citations92
US7635856B2Dec 22, 2009
Vertical nanotube field effect transistor
IBM11 citations92
US7253065B2Aug 7, 2007
Self-aligned nanotube field effect transistor and method of fabricating same
IBM13 citations92
US6275259B1Aug 14, 2001
Digital automatic gain control circuit for image system
IBM50 citations92
US6020581AFeb 1, 2000
Solid state CMOS imager using silicon-on-insulator or bulk silicon
IBM20 citations92
US7598516B2Oct 6, 2009
Self-aligned process for nanotube/nanowire FETs
IBM24 citations91
US6864520B2Mar 8, 2005
Germanium field effect transistor and method of fabricating the same
IBM46 citations90
US8003453B2Aug 23, 2011
Self-aligned process for nanotube/nanowire FETs
IBM11 citations83
US7074707B2Jul 11, 2006
Method of fabricating a connection device
IBM6 citations74
US7342301B2Mar 11, 2008
Connection device with actuating element for changing a conductive state of a via
IBM3 citations63
US7145212B2Dec 5, 2006
Method for manufacturing device substrate with metal back-gate and structure formed thereby
IBM3 citations63
US7106096B2Sep 12, 2006
Circuit and method of controlling integrated circuit power consumption using phase change switches
IBM5 citations63
US6797604B2Sep 28, 2004
Method for manufacturing device substrate with metal back-gate and structure formed thereby
IBM3 citations63
US7791110B2Sep 7, 2010
Integrated circuit having gates and active regions forming a regular grating
IBM0 citations52
TAIWAN SEMICONDUCTOR MFG CO LTD
12 patentsUS11342015B1May 24, 2022
Memory device and memory circuit
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11211426B2Dec 28, 2021
Tunnel junction selector MRAM
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US12431423B2Sep 30, 2025
Method for low-cost, high-bandwidth monolithic system integration beyond reticle limit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12144184B2Nov 12, 2024
Tunnel junction selector MRAM
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11967375B2Apr 23, 2024
Memory cell with built-in amplifying function, memory device and method using the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11737284B2Aug 22, 2023
Tunnel junction selector MRAM
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11735515B2Aug 22, 2023
Method for low-cost, high-bandwidth monolithic system integration beyond reticle limit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11183236B2Nov 23, 2021
Memory cell with built-in amplifying function, memory device and method using the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11721376B2Aug 8, 2023
Memory device, operation method of memory device and operation method of memory circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11901004B2Feb 13, 2024
Memory array, memory structure and operation method of memory array
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12469535B2Nov 11, 2025
Multilevel non-volatile memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11177435B2Nov 16, 2021
Cross-point memory-selector composite pillar stack structures and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52