Inventor
SAKAKIBARA TOSHIO
JP25 patents
⚠️ This page may combine multiple inventors who share the name “SAKAKIBARA TOSHIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
DENSO CORP
11 patentsUS6525375B1Feb 25, 2003
Semiconductor device having trench filled up with gate electrode
DENSO CORP79 citations98
US6495294B1Dec 17, 2002
Method for manufacturing semiconductor substrate having an epitaxial film in the trench
DENSO CORP117 citations97
US6150697ANov 21, 2000
Semiconductor apparatus having high withstand voltage
DENSO CORP106 citations96
US6696323B2Feb 24, 2004
Method of manufacturing semiconductor device having trench filled up with gate electrode
DENSO CORP32 citations92
US6406982B2Jun 18, 2002
Method of improving epitaxially-filled trench by smoothing trench prior to filling
DENSO CORP27 citations92
US6104078AAug 15, 2000
Design for a semiconductor device having elements isolated by insulating regions
DENSO CORP29 citations92
US7855384B2Dec 21, 2010
SIC semiconductor device and method for manufacturing the same
DENSO CORP21 citations90
US6809034B2Oct 26, 2004
Method of etching metallic thin film on thin film resistor
DENSO CORP9 citations72
US6770564B1Aug 3, 2004
Method of etching metallic thin film on thin film resistor
DENSO CORP7 citations72
US7470930B2Dec 30, 2008
Silicon carbide semiconductor device
DENSO CORP2 citations63
US7763893B2Jul 27, 2010
Silicon carbide semiconductor device
DENSO CORP0 citations52
NIPPON DENSO CO
9 patentsUS4774556ASep 27, 1988
Non-volatile semiconductor memory device
NIPPON DENSO CO186 citations99
US5480832AJan 2, 1996
Method for fabrication of semiconductor device
NIPPON DENSO CO57 citations95
US5644157AJul 1, 1997
High withstand voltage type semiconductor device having an isolation region
NIPPON DENSO CO25 citations92
US5599722AFeb 4, 1997
SOI semiconductor device and method of producing same wherein warpage is reduced in the semiconductor device
NIPPON DENSO CO45 citations92
US5592015AJan 7, 1997
Dielectric isolated type semiconductor device provided with bipolar element
NIPPON DENSO CO23 citations92
US5557134ASep 17, 1996
Dielectric isolated type semiconductor device
NIPPON DENSO CO25 citations92
US5449946ASep 12, 1995
Semiconductor device provided with isolation region
NIPPON DENSO CO28 citations92
US5017505AMay 21, 1991
Method of making a nonvolatile semiconductor memory apparatus with a floating gate
NIPPON DENSO CO33 citations92
US5072277ADec 10, 1991
Semiconductor device with gradually varying doping levels to compensate for thickness variations
NIPPON DENSO CO18 citations74