Inventor
GRAVES ABE TROY L
US25 patents
⚠️ This page may combine multiple inventors who share the name “GRAVES ABE TROY L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
11 patentsUS9886193B2Feb 6, 2018
Architecture and implementation of cortical system, and fabricating an architecture using 3D wafer scale integration
IBM2 citations73
US8951906B2Feb 10, 2015
Method of forming a through-silicon via utilizing a metal contact pad in a back-end-of-line wiring level to fill the through-silicon via
IBM4 citations73
US9055703B2Jun 9, 2015
Sidewalls of electroplated copper interconnects
IBM1 citations63
US8927427B2Jan 6, 2015
Anticipatory implant for TSV
IBM2 citations63
US8889542B2Nov 18, 2014
Method of forming a through-silicon via utilizing a metal contact pad in a back-end-of-line wiring level to fill the through-silicon via
IBM2 citations63
US8907494B2Dec 9, 2014
Electrical leakage reduction in stacked integrated circuits having through-silicon-via (TSV) structures
IBM2 citations61
US10613754B2Apr 7, 2020
Architecture and implementation of cortical system, and fabricating an architecture using 3D wafer scale integration
IBM0 citations52
US10503402B2Dec 10, 2019
Architecture and implementation of cortical system, and fabricating an architecture using 3D wafer scale integration
IBM0 citations52
US10170337B2Jan 1, 2019
Implant after through-silicon via (TSV) etch to getter mobile ions
IBM0 citations52
US9060457B2Jun 16, 2015
Sidewalls of electroplated copper interconnects
IBM0 citations52
US9040407B2May 26, 2015
Sidewalls of electroplated copper interconnects
IBM0 citations52
FAROOQ MUKTA G
6 patentsUS8853857B2Oct 7, 2014
3-D integration using multi stage vias
FAROOQ MUKTA G5 citations84
US8691691B2Apr 8, 2014
TSV pillar as an interconnecting structure
FAROOQ MUKTA G10 citations84
US8546961B2Oct 1, 2013
Alignment marks to enable 3D integration
FAROOQ MUKTA G9 citations84
US9214435B2Dec 15, 2015
Via structure for three-dimensional circuit integration
FAROOQ MUKTA G5 citations73
US8956973B2Feb 17, 2015
Bottom-up plating of through-substrate vias
FAROOQ MUKTA G5 citations73
US8791005B2Jul 29, 2014
Sidewalls of electroplated copper interconnects
FAROOQ MUKTA G3 citations63
GLOBALFOUNDRIES INC
6 patentsUS9640514B1May 2, 2017
Wafer bonding using boron and nitrogen based bonding stack
GLOBALFOUNDRIES INC2 citations71
US9263324B2Feb 16, 2016
3-D integration using multi stage vias
GLOBALFOUNDRIES INC2 citations63
US10296698B2May 21, 2019
Forming multi-sized through-silicon-via (TSV) structures
GLOBALFOUNDRIES INC0 citations52
US9257336B2Feb 9, 2016
Bottom-up plating of through-substrate vias
GLOBALFOUNDRIES INC0 citations52
US9252133B2Feb 2, 2016
Electrical leakage reduction in stacked integrated circuits having through-silicon-via (TSV) structures
GLOBALFOUNDRIES INC1 citations50
US9476927B2Oct 25, 2016
Structure and method to determine through silicon via build integrity
GLOBALFOUNDRIES INC0 citations42