Inventor
FUJIHIRA TATSUHIKO
JP97 patents
⚠️ This page may combine multiple inventors who share the name “FUJIHIRA TATSUHIKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJI ELECTRIC CO LTD
46 patentsUS6724042B2Apr 20, 2004
Super-junction semiconductor device
FUJI ELECTRIC CO LTD115 citations99
US6294818B1Sep 25, 2001
Parallel-stripe type semiconductor device
FUJI ELECTRIC CO LTD165 citations99
US6097063AAug 1, 2000
Semiconductor device having a plurality of parallel drift regions
FUJI ELECTRIC CO LTD268 citations99
US6696728B2Feb 24, 2004
Super-junction semiconductor device
FUJI ELECTRIC CO LTD73 citations98
US6683347B1Jan 27, 2004
Semiconductor device with alternating conductivity type layer and method of manufacturing the same
FUJI ELECTRIC CO LTD94 citations98
US6677643B2Jan 13, 2004
Super-junction semiconductor device
FUJI ELECTRIC CO LTD108 citations98
US6674126B2Jan 6, 2004
Semiconductor device
FUJI ELECTRIC CO LTD74 citations98
US6551909B1Apr 22, 2003
Semiconductor device with alternating conductivity type layer and method of manufacturing the same
FUJI ELECTRIC CO LTD90 citations98
US6291856B1Sep 18, 2001
Semiconductor device with alternating conductivity type layer and method of manufacturing the same
FUJI ELECTRIC CO LTD214 citations98
US6475864B1Nov 5, 2002
Method of manufacturing a super-junction semiconductor device with an conductivity type layer
FUJI ELECTRIC CO LTD98 citations97
US6673679B1Jan 6, 2004
Semiconductor device with alternating conductivity type layer and method of manufacturing the same
FUJI ELECTRIC CO LTD50 citations96
US6611021B1Aug 26, 2003
Semiconductor device and the method of manufacturing the same
FUJI ELECTRIC CO LTD59 citations96
US6610572B1Aug 26, 2003
Semiconductor device and method for manufacturing the same
FUJI ELECTRIC CO LTD74 citations96
US6566709B2May 20, 2003
Semiconductor device
FUJI ELECTRIC CO LTD36 citations96
US6221688B1Apr 24, 2001
Diode and method for manufacturing the same
FUJI ELECTRIC CO LTD27 citations96
US6175143B1Jan 16, 2001
Schottky barrier
FUJI ELECTRIC CO LTD47 citations96
US5973359AOct 26, 1999
MOS type semiconductor device
FUJI ELECTRIC CO LTD127 citations96
US5757046AMay 26, 1998
MOS type semiconductor device
FUJI ELECTRIC CO LTD79 citations96
US5723890AMar 3, 1998
MOS type semiconductor device
FUJI ELECTRIC CO LTD74 citations96
US5422593AJun 6, 1995
Current-limiting circuit
FUJI ELECTRIC CO LTD101 citations96
US5162966ANov 10, 1992
Semiconductor device having a surge protecting element
FUJI ELECTRIC CO LTD63 citations96
US5159516AOct 27, 1992
Overcurrent-detection circuit
FUJI ELECTRIC CO LTD70 citations96
US5070322ADec 3, 1991
An overheating detection circuit including a reversely biased junction having a temperature dependent reverse leakage current for detecting overheating of a power integrated circuit
FUJI ELECTRIC CO LTD59 citations96
US6677626B1Jan 13, 2004
Semiconductor device with alternating conductivity type layer and method of manufacturing the same
FUJI ELECTRIC CO LTD90 citations95
US5621601AApr 15, 1997
Over-current protection apparatus for transistor
FUJI ELECTRIC CO LTD82 citations94
US7002211B2Feb 21, 2006
Lateral super-junction semiconductor device
FUJI ELECTRIC CO LTD21 citations93
US6900109B2May 31, 2005
Method of manufacturing a semiconductor device with a vertical drain drift layer of the alternating-conductivity-type
FUJI ELECTRIC CO LTD24 citations93
US6768167B2Jul 27, 2004
MIS semiconductor device and the manufacturing method thereof
FUJI ELECTRIC CO LTD20 citations93
US6762097B2Jul 13, 2004
Semiconductor device and method for manufacturing the same
FUJI ELECTRIC CO LTD20 citations93
US6756636B2Jun 29, 2004
Lateral super-junction semiconductor device
FUJI ELECTRIC CO LTD31 citations93
US6734496B2May 11, 2004
Semiconductor device
FUJI ELECTRIC CO LTD21 citations93
US6724040B2Apr 20, 2004
Semiconductor device
FUJI ELECTRIC CO LTD18 citations93
US6720615B2Apr 13, 2004
Vertical-type MIS semiconductor device
FUJI ELECTRIC CO LTD27 citations93
US6700141B2Mar 2, 2004
Semiconductor device
FUJI ELECTRIC CO LTD47 citations93
US6627948B1Sep 30, 2003
Vertical layer type semiconductor device
FUJI ELECTRIC CO LTD19 citations93
US6586801B2Jul 1, 2003
Semiconductor device having breakdown voltage limiter regions
FUJI ELECTRIC CO LTD27 citations93
US6576935B2Jun 10, 2003
Bidirectional semiconductor device and method of manufacturing the same
FUJI ELECTRIC CO LTD28 citations93
US6548865B2Apr 15, 2003
High breakdown voltage MOS type semiconductor apparatus
FUJI ELECTRIC CO LTD18 citations93
US6246092B1Jun 12, 2001
High breakdown voltage MOS semiconductor apparatus
FUJI ELECTRIC CO LTD41 citations93
US5736774AApr 7, 1998
High voltage integrated circuit, and high voltage level shift unit used for the same
FUJI ELECTRIC CO LTD44 citations93
US5576655ANov 19, 1996
High-withstand-voltage integrated circuit for driving a power semiconductor device
FUJI ELECTRIC CO LTD52 citations93
US5355123AOct 11, 1994
Overheating detection circuit for detecting overheating of a power device
FUJI ELECTRIC CO LTD43 citations93
US5349336ASep 20, 1994
Overheating detection circuit for detecting overheating of a power device
FUJI ELECTRIC CO LTD21 citations93
US5097302AMar 17, 1992
Semiconductor device having current detection capability
FUJI ELECTRIC CO LTD40 citations93
US5043781AAug 27, 1991
Semiconductor device
FUJI ELECTRIC CO LTD38 citations93
US5031009AJul 9, 1991
Conductivity modulation semiconductor with no negative resistance characteristics
FUJI ELECTRIC CO LTD38 citations93
FUJI ELEC DEVICE TECH CO LTD
3 patentsUS6903418B2Jun 7, 2005
Semiconductor device
FUJI ELEC DEVICE TECH CO LTD58 citations96
US7042046B2May 9, 2006
Super-junction semiconductor device and method of manufacturing the same
FUJI ELEC DEVICE TECH CO LTD24 citations93
US7002205B2Feb 21, 2006
Super-junction semiconductor device and method of manufacturing the same
FUJI ELEC DEVICE TECH CO LTD39 citations93
FUJI ELECTRIC CO LTDS
1 patentShowing the top 50 of 97 patents by PatentIndex Score.