Inventor
LENGADE SWAPNIL A
US17 patents
⚠️ This page may combine multiple inventors who share the name “LENGADE SWAPNIL A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
14 patentsUS9166158B2Oct 20, 2015
Apparatuses including electrodes having a conductive barrier material and methods of forming same
MICRON TECHNOLOGY INC28 citations97
US10163977B1Dec 25, 2018
Chalcogenide memory device components and composition
MICRON TECHNOLOGY INC34 citations94
US10217936B2Feb 26, 2019
Apparatuses including electrodes having a conductive barrier material and methods of forming same
MICRON TECHNOLOGY INC4 citations83
US10069069B2Sep 4, 2018
Apparatuses including electrodes having a conductive barrier material and methods of forming same
MICRON TECHNOLOGY INC4 citations83
US10062844B2Aug 28, 2018
Apparatuses including electrodes having a conductive barrier material and methods of forming same
MICRON TECHNOLOGY INC4 citations83
US10727405B2Jul 28, 2020
Chalcogenide memory device components and composition
MICRON TECHNOLOGY INC4 citations73
US10651381B2May 12, 2020
Apparatuses including electrodes having a conductive barrier material and methods of forming same
MICRON TECHNOLOGY INC2 citations72
US11152427B2Oct 19, 2021
Chalcogenide memory device components and composition
MICRON TECHNOLOGY INC0 citations62
US11114615B2Sep 7, 2021
Chalcogenide memory device components and composition
MICRON TECHNOLOGY INC0 citations62
US11081644B2Aug 3, 2021
Apparatuses including electrodes having a conductive barrier material and methods of forming same
MICRON TECHNOLOGY INC0 citations62
US10957855B2Mar 23, 2021
Apparatuses including electrodes having a conductive barrier material and methods of forming same
MICRON TECHNOLOGY INC0 citations62
US10950791B2Mar 16, 2021
Apparatuses including electrodes having a conductive barrier material and methods of forming same
MICRON TECHNOLOGY INC0 citations62
US10439000B2Oct 8, 2019
Chalcogenide memory device components and composition
MICRON TECHNOLOGY INC0 citations52
US9006702B2Apr 14, 2015
Semiconductor structure including a zirconium oxide material
MICRON TECHNOLOGY INC0 citations52