P

Inventor

LENGADE SWAPNIL A

US17 patents
⚠️ This page may combine multiple inventors who share the name “LENGADE SWAPNIL A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

14 patents
US9166158B2Oct 20, 2015

Apparatuses including electrodes having a conductive barrier material and methods of forming same

MICRON TECHNOLOGY INC28 citations97
US10163977B1Dec 25, 2018

Chalcogenide memory device components and composition

MICRON TECHNOLOGY INC34 citations94
US10217936B2Feb 26, 2019

Apparatuses including electrodes having a conductive barrier material and methods of forming same

MICRON TECHNOLOGY INC4 citations83
US10069069B2Sep 4, 2018

Apparatuses including electrodes having a conductive barrier material and methods of forming same

MICRON TECHNOLOGY INC4 citations83
US10062844B2Aug 28, 2018

Apparatuses including electrodes having a conductive barrier material and methods of forming same

MICRON TECHNOLOGY INC4 citations83
US10727405B2Jul 28, 2020

Chalcogenide memory device components and composition

MICRON TECHNOLOGY INC4 citations73
US10651381B2May 12, 2020

Apparatuses including electrodes having a conductive barrier material and methods of forming same

MICRON TECHNOLOGY INC2 citations72
US11152427B2Oct 19, 2021

Chalcogenide memory device components and composition

MICRON TECHNOLOGY INC0 citations62
US11114615B2Sep 7, 2021

Chalcogenide memory device components and composition

MICRON TECHNOLOGY INC0 citations62
US11081644B2Aug 3, 2021

Apparatuses including electrodes having a conductive barrier material and methods of forming same

MICRON TECHNOLOGY INC0 citations62
US10957855B2Mar 23, 2021

Apparatuses including electrodes having a conductive barrier material and methods of forming same

MICRON TECHNOLOGY INC0 citations62
US10950791B2Mar 16, 2021

Apparatuses including electrodes having a conductive barrier material and methods of forming same

MICRON TECHNOLOGY INC0 citations62
US10439000B2Oct 8, 2019

Chalcogenide memory device components and composition

MICRON TECHNOLOGY INC0 citations52
US9006702B2Apr 14, 2015

Semiconductor structure including a zirconium oxide material

MICRON TECHNOLOGY INC0 citations52

INTEL CORP

2 patents

COLLINS DALE W

1 patent