Inventor

PURTELL ROBERT J

US24 patents

⚠️ This page may combine multiple inventors who share the name “PURTELL ROBERT J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PURTELL ROBERT J

IBM

Structure and method to reduce silicon substrate consumption and improve gate sheet resistance during silicide formation

Method of base formation in a BiCMOS process

Methods for forming CMOS devices with intrinsically stressed metal silicide layers

Solid CO2 cleaning

Method and apparatus for forming nickel silicide with low defect density in FET devices

Methods of base formation in a BiCMOS process

Method for reducing dendrite formation in nickel silicon salicide processes

Method to build a microfilter

Method of in situ monitoring of supercritical fluid process conditions

Methods of base formation in a BiCOMS process

Method and apparatus for forming nickel silicide with low defect density in FET devices

Air break for improved silicide formation with composite caps

Method for reducing dendrite formation in nickel silicon salicide processes

Method for improved formation of cobalt silicide contacts in semiconductor devices

Clustered surface preparation for silicide and metal contacts

Method for enhanced uni-directional diffusion of metal and subsequent silicide formation

Method for controlling voiding and bridging in silicide formation

Air break for improved silicide formation with composite caps

Method for improved formation of nickel silicide contacts in semiconductor devices

PURTELL ROBERT J

Low temperature dielectric flow using microwaves

Structure and method for forming a salicide on the gate electrode of a trench-gate FET

Single crystal U-MOS gates using microwave crystal regrowth

WONG KEITH KWONG HON

Method and apparatus for forming nickel silicide with low defect density in FET devices

LAM RES CORP

Low stress bonding of silicon or germanium parts