Inventor
SAXENA TANUJ
US15 patents
⚠️ This page may combine multiple inventors who share the name “SAXENA TANUJ”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NXP USA INC
14 patentsUS10103257B1Oct 16, 2018
Termination design for trench superjunction power MOSFET
NXP USA INC17 citations93
US10811502B1Oct 20, 2020
Method of manufacture of super-junction power semiconductor device
NXP USA INC14 citations83
US10431678B2Oct 1, 2019
Termination design for trench superjunction power MOSFET
NXP USA INC4 citations72
US10153357B1Dec 11, 2018
Superjunction power semiconductor device and method for forming
NXP USA INC3 citations71
US12170254B2Dec 17, 2024
Transistor with integrated short circuit protection
NXP USA INC0 citations62
US11631763B2Apr 18, 2023
Termination for trench field plate power MOSFET
NXP USA INC0 citations62
US11489072B2Nov 1, 2022
Mirror device structure for power MOSFET and method of manufacture
NXP USA INC0 citations62
US11329150B2May 10, 2022
Termination for trench field plate power MOSFET
NXP USA INC1 citations62
US11004970B2May 11, 2021
Mirror device structure for power MOSFET and method of manufacture
NXP USA INC0 citations62
US10644146B1May 5, 2020
Vertical bi-directional switches and method for making same
NXP USA INC1 citations60
US12349436B2Jul 1, 2025
Termination ballast to suppress hotspot formation in trench field plate power MOSFETs
NXP USA INC0 citations49
US10672902B2Jun 2, 2020
Bidirectional power MOSFET structure with a cathode short structure
NXP USA INC0 citations48
US10297684B2May 21, 2019
Bidirectional power MOSFET structure with a cathode short structure
NXP USA INC0 citations48
US10607880B2Mar 31, 2020
Die with buried doped isolation region
NXP USA INC0 citations41