Inventor
IWAYA MOTOAKI
JP20 patents
⚠️ This page may combine multiple inventors who share the name “IWAYA MOTOAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNIV MEIJO
9 patentsUS9437775B2Sep 6, 2016
Nitride semiconductor light-emitting device
UNIV MEIJO20 citations92
US9716209B2Jul 25, 2017
Method of manufacturing n-p-n nitride-semiconductor light-emitting device, and n-p-n nitride-semiconductor light-emitting device
UNIV MEIJO5 citations70
US10593831B2Mar 17, 2020
Nitride semiconductor multilayer film reflector and light-emitting device using the same
UNIV MEIJO1 citations62
US7985964B2Jul 26, 2011
Light-emitting semiconductor device
UNIV MEIJO5 citations62
US7855385B2Dec 21, 2010
SiC crystal and semiconductor device
UNIV MEIJO4 citations62
US7612381B2Nov 3, 2009
Method for fabricating a semiconductor device and semiconductor device
UNIV MEIJO6 citations62
US9666753B2May 30, 2017
Nitride semiconductor light emitting device and method of fabricating the same
UNIV MEIJO0 citations44
US7756189B2Jul 13, 2010
Two-light flux interference exposure device, two-light flux interference exposure method, semiconductor light emitting element manufacturing method, and semiconductor light emitting element
UNIV MEIJO0 citations41
US9847449B2Dec 19, 2017
Nitride semiconductor light-emitting device with periodic gain active layers
UNIV MEIJO0 citations37
ASAHI CHEMICAL IND
4 patentsUS12020930B2Jun 25, 2024
Nitride semiconductor element
ASAHI CHEMICAL IND0 citations62
US10734225B2Aug 4, 2020
Nitride semiconductor substrate and method for manufacturing same
ASAHI CHEMICAL IND1 citations62
US11088512B2Aug 10, 2021
Nitride semiconductor element
ASAHI CHEMICAL IND0 citations52
US10424684B2Sep 24, 2019
MSM ultraviolet ray receiving element, MSM ultraviolet ray receiving device
ASAHI CHEMICAL IND0 citations36
KAMIYAMA SATOSHI
3 patentsUS8941136B2Jan 27, 2015
Semiconductor light emitting element
KAMIYAMA SATOSHI3 citations60
US7732826B2Jun 8, 2010
Semiconductor and method of semiconductor fabrication
KAMIYAMA SATOSHI5 citations60
US9099597B2Aug 4, 2015
Light emitting diode element with porous SiC emitting by donor acceptor pair
KAMIYAMA SATOSHI0 citations39