P

Inventor

HO CHIN-HSIUNG

US12 patents

Patents

12 patents
US6037204AMar 14, 2000

Silicon and arsenic double implanted pre-amorphization process for salicide technology

TAIWAN SEMICONDUCTOR MFG94 citations97
US6020255AFeb 1, 2000

Dual damascene interconnect process with borderless contact

TAIWAN SEMICONDUCTOR MFG105 citations97
US6083824AJul 4, 2000

Borderless contact

TAIWAN SEMICONDUCTOR MFG56 citations96
US6063695AMay 16, 2000

Simplified process for the fabrication of deep clear laser marks using a photoresist mask

TAIWAN SEMICONDUCTOR MFG57 citations94
US5674775AOct 7, 1997

Isolation trench with a rounded top edge using an etch buffer layer

TAIWAN SEMICONDUCTOR MFG79 citations94
US6057207AMay 2, 2000

Shallow trench isolation process using chemical-mechanical polish with self-aligned nitride mask on HDP-oxide

TAIWAN SEMICONDUCTOR MFG45 citations92
US5821153AOct 13, 1998

Method to reduce field oxide loss from etches

TAIWAN SEMICONDUCTOR MFG20 citations92
US6555477B1Apr 29, 2003

Method for preventing Cu CMP corrosion

TAIWAN SEMICONDUCTOR MFG33 citations91
US6207538B1Mar 27, 2001

Method for forming n and p wells in a semiconductor substrate using a single masking step

TAIWAN SEMICONDUCTOR MFG14 citations73
US6103581AAug 15, 2000

Method for producing shallow trench isolation structure

TAIWAN SEMICONDUCTOR MFG12 citations73
US6716740B2Apr 6, 2004

Method for depositing silicon oxide incorporating an outgassing step

TAIWAN SEMICONDUCTOR MFG6 citations60
US6647998B2Nov 18, 2003

Electrostatic charge-free solvent-type dryer for semiconductor wafers

TAIWAN SEMICONDUCTOR MFG0 citations46