Inventor
TSVETKOV VALERI F
US38 patents
⚠️ This page may combine multiple inventors who share the name “TSVETKOV VALERI F”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CREE INC
26 patentsUS6218680B1Apr 17, 2001
Semi-insulating silicon carbide without vanadium domination
CREE INC349 citations99
US7601441B2Oct 13, 2009
One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
CREE INC27 citations96
US6639247B2Oct 28, 2003
Semi-insulating silicon carbide without vanadium domination
CREE INC51 citations96
US6403982B2Jun 11, 2002
Semi-insulating silicon carbide without vanadium domination
CREE INC71 citations96
US6396080B2May 28, 2002
Semi-insulating silicon carbide without vanadium domination
CREE INC69 citations96
US7323051B2Jan 29, 2008
One hundred millimeter single crystal silicon carbide wafer
CREE INC30 citations95
US7314520B2Jan 1, 2008
Low 1c screw dislocation 3 inch silicon carbide wafer
CREE INC51 citations94
US6200917B1Mar 13, 2001
Colorless silicon carbide gemstones
CREE INC48 citations94
US7338822B2Mar 4, 2008
LED fabrication via ion implant isolation
CREE INC33 citations93
US7351286B2Apr 1, 2008
One hundred millimeter single crystal silicon carbide wafer
CREE INC20 citations92
US7316747B2Jan 8, 2008
Seeded single crystal silicon carbide growth and resulting crystals
CREE INC34 citations92
US7294324B2Nov 13, 2007
Low basal plane dislocation bulk grown SiC wafers
CREE INC26 citations92
US7192482B2Mar 20, 2007
Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
CREE INC24 citations92
US7147715B2Dec 12, 2006
Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
CREE INC20 citations92
US8785946B2Jul 22, 2014
Low 1C screw dislocation 3 inch silicon carbide wafer
CREE INC13 citations91
US8384090B2Feb 26, 2013
Low 1C screw dislocation 3 inch silicon carbide wafer
CREE INC24 citations91
US7943954B2May 17, 2011
LED fabrication via ion implant isolation
CREE INC9 citations84
US7563321B2Jul 21, 2009
Process for producing high quality large size silicon carbide crystals
CREE INC15 citations84
US7300519B2Nov 27, 2007
Reduction of subsurface damage in the production of bulk SiC crystals
CREE INC17 citations84
US7323052B2Jan 29, 2008
Apparatus and method for the production of bulk silicon carbide single crystals
CREE INC11 citations83
US7220313B2May 22, 2007
Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient
CREE INC15 citations82
US7387680B2Jun 17, 2008
Method and apparatus for the production of silicon carbide crystals
CREE INC9 citations81
US6964917B2Nov 15, 2005
Semi-insulating silicon carbide produced by Neutron transmutation doping
CREE INC9 citations73
US7592634B2Sep 22, 2009
LED fabrication via ion implant isolation
CREE INC4 citations63
US7364617B2Apr 29, 2008
Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
CREE INC4 citations63
US7811943B2Oct 12, 2010
Process for producing silicon carbide crystals having increased minority carrier lifetimes
CREE INC0 citations51
WOLFSPEED INC
4 patentsUS12054850B2Aug 6, 2024
Large diameter silicon carbide wafers
WOLFSPEED INC5 citations81
US12125701B2Oct 22, 2024
Large dimension silicon carbide single crystalline materials with reduced crystallographic stress
WOLFSPEED INC2 citations67
US12473661B2Nov 18, 2025
Large diameter silicon carbide wafers
WOLFSPEED INC0 citations58
US12024794B2Jul 2, 2024
Reduced optical absorption for silicon carbide crystalline materials
WOLFSPEED INC1 citations58
CREE RESEARCH INC
2 patentsLEONARD ROBERT TYLER
2 patentsUS9790619B2Oct 17, 2017
Method of producing high quality silicon carbide crystal in a seeded growth system
LEONARD ROBERT TYLER25 citations93
US9200381B2Dec 1, 2015
Producing high quality bulk silicon carbide single crystal by managing thermal stresses at a seed interface
LEONARD ROBERT TYLER28 citations93