Inventor

CAREY MATTHEW J

US39 patents

⚠️ This page may combine multiple inventors who share the name “CAREY MATTHEW J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CAREY MATTHEW J

HITACHI GLOBAL STORAGE TECH

Dual-layer perpendicular magnetic recording media with laminated underlayer formed with antiferromagnetically coupled films

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with improved ferromagnetic free layer structure

Magnetoresistive sensor based on spin accumulation effect with terminal connection at back end of sensor

Magnetoresistive sensor based on spin accumulation effect with free layer stabilized by in-stack orthogonal magnetic coupling

Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized by in-stack orthogonal magnetic coupling

Magnetoresistive device with exchange-coupled structure having half-metallic ferromagnetic Heusler alloy in the pinned layer

Extraordinary magnetoresistance sensor with perpendicular magnetic biasing by an antiferromagnetic/ferromagnetic exchange-coupled structure

Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized by in-stack orthogonal magnetic coupling to an antiparallel pinned biasing layer

Current-perpendicular-to-the-plane spin-valve (CPP-SV) sensor with current-confining apertures concentrated near the sensing edge

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with CoFeGe ferromagnetic layers

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-free layer structure and low current-induced noise

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-pinned structure having segregated grains of a ferromagnetic material and additive Cu, Au or Ag

Magnetoresistive sensor with antiferromagnetic exchange-coupled structure formed by use of chemical-ordering enhancement layer

Extraordinary magnetoresistance sensor with perpendicular magnetic biasing by a ferromagnetic multilayer

Magnetoresistive sensor with antiferromagnetic exchange-coupled structure having underlayer for enhancing chemical-ordering in the antiferromagnetic layer

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with improved antiparallel-pinned structure

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with high-resistivity amorphous ferromagnetic layers

HITACHI GLOBAL STORAGE TECH NL

Method for making a scissoring-type current-perpendicular-to-the-plane (CPP) magnetoresistive sensor

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with CoFeGe ferromagnetic layers and Ag or AgCu spacer layer

Chemically disordered material used to form a free layer or a pinned layer of a magnetoresistance (MR) read element

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-free layer structure and low current-induced noise

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-pinned layer containing silicon

HGST Netherlands BV

Tunneling magnetoresistive (TMR) read head with low magnetic noise

Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with magnetic damping material at the sensor edges

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with multilayer reference layer including a crystalline CoFeX layer and a Heusler alloy layer

Method for making a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor having a low-coercivity reference layer

Magnetic recording head with CPP-GMR spin-valve sensor and extended pinned layer

CAREY MATTHEW J

Magnetic field sensing system using spin-torque diode effect

Scissoring-type current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensors with damped free layer structures

Tunneling magnetoresistive (TMR) device with improved ferromagnetic underlayer for MgO tunneling barrier layer

Method for making a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor containing a ferromagnetic alloy requiring post-deposition annealing

Magnetoresistive sensor employing nitrogenated Cu/Ag under-layers with (100) textured growth as templates for CoFe, CoFeX, and Co2(MnFe)X alloys

SAMSUNG ELECTRONICS CO LTD

Quantum computing device spin transfer torque magnetic memory

Method and system for providing magnetic junctions with rare earth-transition metal layers

Method and system for providing an engineered magnetic layer including Heusler layers and an amorphous insertion layer

READ RITE CORP

Read/write head having a GMR sensor biased by permanent magnets located between the GMR and the pole shields

IBM

Low-resistance high-magnetoresistance magnetic tunnel junction device with improved tunnel barrier

BRINKMAN ELIZABETH ANN

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with multilayer reference layer including a Heusler alloy

BERTHOLD THOMAS R

Method for making a current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensor with a confined-current-path (CCP)