Inventor · disambiguated record
Ming-Jer Kao
Also filed as: KAO MING-JER
26 granted patents·14 pending applications·493 citations·filing 1999–2018
97Inventor score
Top patents by PatentIndex Score
40 records- 0195US7515458B2Structure and access method for magnetic memory cell and circuit of magnetic memoryIND TECH RES INST·Filed 2006·Granted Apr 7, 2009·41 cites·28 claims
- 0289US6723624B2Method for fabricating n-type carbon nanotube deviceIND TECH RES INST·Filed 2003·Granted Apr 20, 2004·38 cites·6 claims
- 0388US6852582B2Carbon nanotube gate field effect transistorIND TECH RES INST·Filed 2003·Granted Feb 8, 2005·59 cites·6 claims
- 0486US7023726B1Hybrid magnetoresistive random access memory (MRAM) architectureIND TECH RES INST·Filed 2005·Granted Apr 4, 2006·28 cites·7 claims
- 0585US7226531B2Method of making an electroplated interconnection wire of a composite of metal and carbon nanotubesIND TECH RES INST·Filed 2005·Granted Jun 5, 2007·11 cites·12 claims
- 0685US7182914B2Structure and manufacturing process of a nano device transistor for a biosensorIND TECH RES INST·Filed 2003·Granted Feb 27, 2007·30 cites·12 claims
- 0785US6757189B2Magnetic random access memory with memory cells of different resistances connected in series and parallelIND TECH RES INST·Filed 2003·Granted Jun 29, 2004·39 cites·34 claims
- 0885US6562706B1Structure and manufacturing method of SiC dual metal trench Schottky diodeIND TECH RES INST·Filed 2001·Granted May 13, 2003·40 cites·12 claims
- 0984US7577019B2Magnetic memory cell with multiple-bit in stacked structure and magnetic memory deviceIND TECH RES INST·Filed 2007·Granted Aug 18, 2009·15 cites·14 claims
- 1084US6821911B1Manufacturing method of carbon nanotube transistorsIND TECH RES INST·Filed 2003·Granted Nov 23, 2004·46 cites·26 claims
- 1184US6642595B1Magnetic random access memory with low writing currentIND TECH RES INST·Filed 2002·Granted Nov 4, 2003·39 cites·10 claims
- 1283US6962839B2Apparatus and manufacturing process of carbon nanotube gate field effect transistorIND TECH RES INST·Filed 2004·Granted Nov 8, 2005·35 cites·4 claims
- 1380US6791887B2High reliable reference current generator for MRAMIND TECH RES INST·Filed 2003·Granted Sep 14, 2004·24 cites·6 claims
- 1471US6862228B2High reliable reference current generator for MRAMIND TECH RES INST·Filed 2004·Granted Mar 1, 2005·15 cites·4 claims
- 1569US7208808B2Magnetic random access memory with lower switching fieldIND TECH RES INST·Filed 2005·Granted Apr 24, 2007·4 cites·6 claims
- 1667US7420837B2Method for switching magnetic moment in magnetoresistive random access memory with low currentIND TECH RES INST·Filed 2006·Granted Sep 2, 2008·5 cites·17 claims
- 1763US7539049B2Magnetic random access memory and operation methodIND TECH RES INST·Filed 2007·Granted May 26, 2009·5 cites·20 claims
- 1859US7463510B2High-bandwidth magnetoresistive random access memory devicesIND TECH RES INST·Filed 2007·Granted Dec 9, 2008·4 cites·3 claims
- 1953US7800937B2Method for switching magnetic moment in magnetoresistive random access memory with low currentIND TECH RES INST·Filed 2008·Granted Sep 21, 2010·2 cites·7 claims
- 2052US7577017B2High-bandwidth magnetoresistive random access memory devices and methods of operation thereofIND TECH RES INST·Filed 2006·Granted Aug 18, 2009·2 cites·18 claims
- 2150US7001805B2Method for fabricating n-type carbon nanotube deviceIND TECH RES INST·Filed 2002·Granted Feb 21, 2006·2 cites·6 claims
- 2250US2008003701A1Non-via method of connecting magnetoelectric elements with conductive lineIND TECH RES INST·Filed 2007·Application pending·0 cites
- 2346US2009014705A1Phase change memory device and method for fabricating the sameIND TECH RES INST·Filed 2008·Application pending·0 cites
- 2444US2006148234A1Non-via method of connecting magnetoelectric elements with conductive lineIND TECH RES INST·Filed 2005·Application pending·0 cites
- 2543US5981999APower trench DMOS with large active cell densityIND TECH RES INST·Filed 1999·Granted Nov 9, 1999·9 cites·14 claims
- 2642US2004043148A1Method for fabricating carbon nanotube deviceIND TECH RES INST·Filed 2002·Application pending·0 cites
- 2742US2006138509A1Magnetic random access memory with lower switching field through indirect exchange couplingIND TECH RES INST·Filed 2005·Application pending·0 cites
- 2841US2007187785A1Magnetic memory cell and manufacturing method thereofHUNG CHIEN-CHUNG·Filed 2006·Application pending·0 cites
- 2940US2007200188A1Magnetic random access memory with reference magnetic resistance and reading method thereofIND TECH RES INST·Filed 2007·Application pending·0 cites
- 3039US10541233B2Display deviceIND TECH RES INST·Filed 2018·Granted Jan 21, 2020·0 cites·18 claims
- 3138US7535081B2Metal nanoline process and applications on growth of aligned nanostructure thereofIND TECH RES INST·Filed 2004·Granted May 19, 2009·0 cites·14 claims
- 3238US7515462B2Writing method for magnetic memory cell and magnetic memory array structureIND TECH RES INST·Filed 2007·Granted Apr 7, 2009·0 cites·18 claims
- 3338US2005287788A1Manufacturing method of nanowire arrayIND TECH RES INST·Filed 2004·Application pending·0 cites
- 3436US2007223270A1High write selectivity and low power magnetic random access memory and method for fabricating the sameHUNG CHIEN-CHUNG·Filed 2007·Application pending·0 cites
- 3535US2006113619A1Magnetic random access memory with reference magnetic resistance and reading method thereofHUNG CHIEN-CHUNG·Filed 2005·Application pending·0 cites
- 3635US2007195593A1Structure of magnetic memory cell and magnetic memory deviceIND TECH RES INST·Filed 2006·Application pending·0 cites
- 3735US2007171703A1Current source of magnetic random access memoryIND TECH RES INST·Filed 2006·Application pending·0 cites
- 3834US7359237B2High write selectivity and low power magnetic random access memory and method for fabricating the sameIND TECH RES INST·Filed 2004·Granted Apr 15, 2008·0 cites·11 claims
- 3934US2006039189A1Magnetic random access memory with tape read line, fabricating method and circuit thereofIND TECH RES INST·Filed 2005·Application pending·0 cites
- 4031US2002137264A1Method of fabrication thin wafer IGBTFiled 2001·Application pending·0 cites
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