Inventor
TANAKA RINA
JP27 patents
⚠️ This page may combine multiple inventors who share the name “TANAKA RINA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
25 patentsUS9741797B2Aug 22, 2017
Insulated gate silicon carbide semiconductor device and method for manufacturing same
MITSUBISHI ELECTRIC CORP10 citations84
US10510843B2Dec 17, 2019
Insulated gate silicon carbide semiconductor device and method for manufacturing same
MITSUBISHI ELECTRIC CORP5 citations73
US9825164B2Nov 21, 2017
Silicon carbide semiconductor device and manufacturing method for same
MITSUBISHI ELECTRIC CORP5 citations73
US9425261B2Aug 23, 2016
Silicon-carbide semiconductor device and method for manufacturing the same
MITSUBISHI ELECTRIC CORP5 citations73
US10468487B2Nov 5, 2019
Semiconductor device
MITSUBISHI ELECTRIC CORP2 citations72
US10229969B2Mar 12, 2019
Power semiconductor device
MITSUBISHI ELECTRIC CORP4 citations72
US10157986B2Dec 18, 2018
Silicon carbide semiconductor device and method for manufacturing same
MITSUBISHI ELECTRIC CORP5 citations72
US11271084B2Mar 8, 2022
Semiconductor device and power converter
MITSUBISHI ELECTRIC CORP5 citations71
US11894428B2Feb 6, 2024
Silicon carbide semiconductor device and power converter
MITSUBISHI ELECTRIC CORP1 citations62
US12266706B2Apr 1, 2025
Semiconductor device and power converter
MITSUBISHI ELECTRIC CORP0 citations61
US9337271B2May 10, 2016
Silicon-carbide semiconductor device and manufacturing method therefor
MITSUBISHI ELECTRIC CORP1 citations52
US12310076B2May 20, 2025
Silicon carbide semiconductor device, power conversion apparatus, and method for manufacturing silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP0 citations51
US12051744B2Jul 30, 2024
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations51
US11848358B2Dec 19, 2023
Silicon carbide semiconductor device and method of manufacturing same
MITSUBISHI ELECTRIC CORP0 citations51
US11637184B2Apr 25, 2023
Silicon carbide semiconductor device, power converter, method of manufacturing silicon carbide semiconductor device, and method of manufacturing power converter
MITSUBISHI ELECTRIC CORP0 citations51
US11251299B2Feb 15, 2022
Silicon carbide semiconductor device and manufacturing method of same
MITSUBISHI ELECTRIC CORP0 citations51
US11158704B2Oct 26, 2021
Semiconductor device and power conversion device
MITSUBISHI ELECTRIC CORP0 citations51
US9698221B2Jul 4, 2017
Semiconductor device
MITSUBISHI ELECTRIC CORP1 citations51
US10453951B2Oct 22, 2019
Semiconductor device having a gate trench and an outside trench
MITSUBISHI ELECTRIC CORP0 citations41
US10347724B2Jul 9, 2019
Silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP0 citations41
US10312233B2Jun 4, 2019
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations41
US10199457B2Feb 5, 2019
Silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP0 citations41
US9972676B2May 15, 2018
Silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP0 citations41
US9954072B2Apr 24, 2018
Silicon-carbide semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP0 citations41
US9773874B2Sep 26, 2017
Silicon carbide semiconductor device and manufacturing method therefor
MITSUBISHI ELECTRIC CORP0 citations41