Inventor
KAGAWA YASUHIRO
JP32 patents
⚠️ This page may combine multiple inventors who share the name “KAGAWA YASUHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
24 patentsUS9741797B2Aug 22, 2017
Insulated gate silicon carbide semiconductor device and method for manufacturing same
MITSUBISHI ELECTRIC CORP10 citations84
US10510843B2Dec 17, 2019
Insulated gate silicon carbide semiconductor device and method for manufacturing same
MITSUBISHI ELECTRIC CORP5 citations73
US9825164B2Nov 21, 2017
Silicon carbide semiconductor device and manufacturing method for same
MITSUBISHI ELECTRIC CORP5 citations73
US9614029B2Apr 4, 2017
Trench-gate type semiconductor device and manufacturing method therefor
MITSUBISHI ELECTRIC CORP2 citations73
US9425261B2Aug 23, 2016
Silicon-carbide semiconductor device and method for manufacturing the same
MITSUBISHI ELECTRIC CORP5 citations73
US10229969B2Mar 12, 2019
Power semiconductor device
MITSUBISHI ELECTRIC CORP4 citations72
US10157986B2Dec 18, 2018
Silicon carbide semiconductor device and method for manufacturing same
MITSUBISHI ELECTRIC CORP5 citations72
US9985093B2May 29, 2018
Trench-gate type semiconductor device and manufacturing method therefor
MITSUBISHI ELECTRIC CORP1 citations63
US11984492B2May 14, 2024
Silicon carbide semiconductor device, power converter, and method of manufacturing silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP1 citations61
US12107158B2Oct 1, 2024
SiC-mosfet
MITSUBISHI ELECTRIC CORP0 citations52
US11658238B2May 23, 2023
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations52
US9337271B2May 10, 2016
Silicon-carbide semiconductor device and manufacturing method therefor
MITSUBISHI ELECTRIC CORP1 citations52
US11217449B2Jan 4, 2022
Semiconductor device and method of manufacturing same
MITSUBISHI ELECTRIC CORP0 citations51
US9698221B2Jul 4, 2017
Semiconductor device
MITSUBISHI ELECTRIC CORP1 citations51
US10580889B2Mar 3, 2020
Semiconductor device and method of manufacturing thereof, and power conversion apparatus
MITSUBISHI ELECTRIC CORP0 citations41
US10453951B2Oct 22, 2019
Semiconductor device having a gate trench and an outside trench
MITSUBISHI ELECTRIC CORP0 citations41
US10431658B2Oct 1, 2019
Silicon carbide semiconductor device, manufacturing method therefor and power conversion apparatus
MITSUBISHI ELECTRIC CORP0 citations41
US10347724B2Jul 9, 2019
Silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP0 citations41
US10312233B2Jun 4, 2019
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations41
US10199457B2Feb 5, 2019
Silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP0 citations41
US9972676B2May 15, 2018
Silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP0 citations41
US9954072B2Apr 24, 2018
Silicon-carbide semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP0 citations41
US9773874B2Sep 26, 2017
Silicon carbide semiconductor device and manufacturing method therefor
MITSUBISHI ELECTRIC CORP0 citations41
US10797169B2Oct 6, 2020
Silicon carbide semiconductor device and power conversion apparatus
MITSUBISHI ELECTRIC CORP0 citations39
FURUKAWA AKIHIKO
4 patentsUS8093950B2Jan 10, 2012
Power amplifier having transformer
FURUKAWA AKIHIKO10 citations83
US9293572B2Mar 22, 2016
Power semiconductor device
FURUKAWA AKIHIKO2 citations61
US9111751B2Aug 18, 2015
Silicon carbide semiconductor device and method of fabricating same
FURUKAWA AKIHIKO2 citations61
US8969960B2Mar 3, 2015
Power semiconductor device
FURUKAWA AKIHIKO2 citations61