Inventor
CHOPRA SAURABH
US24 patents
⚠️ This page may combine multiple inventors who share the name “CHOPRA SAURABH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
17 patentsUS7960236B2Jun 14, 2011
Phosphorus containing Si epitaxial layers in N-type source/drain junctions
APPLIED MATERIALS INC12 citations84
US9683308B2Jun 20, 2017
Method and apparatus for precleaning a substrate surface prior to epitaxial growth
APPLIED MATERIALS INC8 citations82
US11152479B2Oct 19, 2021
Semiconductor device, method of making a semiconductor device, and processing system
APPLIED MATERIALS INC3 citations73
US9460918B2Oct 4, 2016
Epitaxy of high tensile silicon alloy for tensile strain applications
APPLIED MATERIALS INC3 citations73
US11195923B2Dec 7, 2021
Method of fabricating a semiconductor device having reduced contact resistance
APPLIED MATERIALS INC5 citations71
US11965241B2Apr 23, 2024
Cluster tools, systems, and methods having one or more pressure stabilization chambers
APPLIED MATERIALS INC2 citations68
US12492487B2Dec 9, 2025
Movable central reflectors of semiconductor processing equipment, and related systems and methods
APPLIED MATERIALS INC0 citations62
US7776698B2Aug 17, 2010
Selective formation of silicon carbon epitaxial layer
APPLIED MATERIALS INC3 citations62
US7772074B2Aug 10, 2010
Method of forming conformal silicon layer for recessed source-drain
APPLIED MATERIALS INC5 citations62
US12068155B2Aug 20, 2024
Anisotropic sige:b epitaxial film growth for gate all around transistor
APPLIED MATERIALS INC0 citations60
US11948796B2Apr 2, 2024
Selective methods for fabricating devices and structures
APPLIED MATERIALS INC0 citations60
US12588248B2Mar 24, 2026
Template for nanosheet source drain formation with bottom dielectric
APPLIED MATERIALS INC0 citations52
US10837122B2Nov 17, 2020
Method and apparatus for precleaning a substrate surface prior to epitaxial growth
APPLIED MATERIALS INC0 citations50
US10428441B2Oct 1, 2019
Method and apparatus for precleaning a substrate surface prior to epitaxial growth
APPLIED MATERIALS INC0 citations50
US12428731B2Sep 30, 2025
Flow guide structures and heat shield structures, and related methods, for deposition uniformity and process adjustability
APPLIED MATERIALS INC0 citations49
US12196617B2Jan 14, 2025
Temperature profile measurement and synchronized control on substrate and susceptor in an epitaxy chamber
APPLIED MATERIALS INC0 citations49
US10446392B2Oct 15, 2019
Self-aligned nanodots for 3D NAND flash memory
APPLIED MATERIALS INC0 citations37
YE ZHIYUAN
3 patentsUS9012328B2Apr 21, 2015
Carbon addition for low resistivity in situ doped silicon epitaxy
YE ZHIYUAN0 citations51
US8652945B2Feb 18, 2014
Epitaxy of high tensile silicon alloy for tensile strain applications
YE ZHIYUAN0 citations51
US8207023B2Jun 26, 2012
Methods of selectively depositing an epitaxial layer
YE ZHIYUAN1 citations51