Inventor

PINARBASI MUSTAFA MICHAEL

US92 patents

⚠️ This page may combine multiple inventors who share the name “PINARBASI MUSTAFA MICHAEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PINARBASI MUSTAFA MICHAEL

HITACHI GLOBAL STORAGE TECH

Current perpendicular to plane (CPP) magnetoresistive sensor having strong pinning and small gap thickness

Magnetoresistive sensor having shape enhanced pinning and low lead resistance

Magnetoresistive sensor having shape enhanced pinning, a flux guide structure and damage free virtual edges

Current perpendicular to plane magnetoresistive sensor having a shape enhanced pinned layer and an in stack bias structure

Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip

Magnetoresistive sensor having an improved pinning structure

GMR and MR enhancing seedlayers for self pinned spin valves

Magnetoresistive sensor having a shape enhanced pinned layer

Magnetoresistive sensor having a high coercivity hard bias structure

GMR enhancing seed layer for self pinned spin valves

Method of manufacturing a self aligned magnetoresistive sensor

Magnetoresistive sensor having an enhanced lead overlay design and shape enhanced pinning

Magnetoresistive sensor having an anisotropic pinned layer for pinning improvement

Magnetoresistive sensor having a shape enhanced pinned layer

Magnetic head having a layered hard bias layer exhibiting reduced noise

Method for use in forming a read sensor for a magnetic head

Self-pinned spin valve sensor with a high coercivity antiparallel (AP) pinned layer

High linear density read head with a contiguous junction and minimal shield shorts

Self-pinned spin valve sensor with stress modification layers for reducing the likelihood of amplitude flip

Method of manufacturing high sensitivity spin valve designs with ion beam treatment

Method for improving hard bias properties of layers in a magnetoresistive sensor

Apparatus having a hard bias seedlayer structure for providing improved properties of a hard bias layer

Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device

Read sensors having nitrogenated hard bias layers and method of making the same

Methods and apparatus for improved read sensors using a multi-layered seed layer structure having a nitrogenated nickel-tantalum layer

Method of fabricating a read head having shaped read sensor-biasing layer junctions using partial milling

Magnetic head having PtMn layer formed by ion beam deposition

GMR enhancing seedlayer for self pinned spin valves

Spin valve with a capping layer comprising an oxidized cobalt layer and method of forming same

Spin valve sensor having one of two AP pinned layers made of cobalt

Current perpendicular to the planes (CPP) sensor with a highly conductive cap structure

Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip

SPIN MEMORY INC

Switching and stability control for perpendicular magnetic tunnel junction device

Precessional spin current structure with non-magnetic insertion layer for MRAM

Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer

Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switching

High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory

Precessional spin current structure with high in-plane magnetization for MRAM

Spin transfer torque structure for MRAM devices having a spin current injection capping layer

Perpendicular magnetic tunnel junction device with precessional spin current layer having a modulated moment density

Polishing stop layer(s) for processing arrays of semiconductor elements

SPIN TRANSFER TECH INC

Precessional spin current structure for MRAM

Spin transfer torque structure for MRAM devices having a spin current injection capping layer

Polishing stop layer(s) for processing arrays of semiconductor elements

Precessional spin current structure for MRAM

Spin transfer torque structure for MRAM devices having a spin current injection capping layer

Perpendicular magnetic tunnel junction device with offset precessional spin current layer

HITACHI GLOBAL STORAGE TECH NL

Magnetoresistive sensor having an anisotropic hard bias with high coercivity

Magnetic head having CPP sensor with improved biasing for free magnetic layer

FREITAG JAMES MAC

Method for manufacturing a magnetoresistive sensor having a novel junction structure for improved track width definition and pinned layer stability