Inventor

SHANK STEVEN M

US213 patents

⚠️ This page may combine multiple inventors who share the name “SHANK STEVEN M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHANK STEVEN M

IBM

Backside device contact

Silicon photonics alignment tolerant vertical grating couplers

Silicon waveguide on bulk silicon substrate and methods of forming

Backside contact to final substrate

Integrated photodetector waveguide structure with alignment tolerance

Silicon photonics integration method and structure

Method for fabricating a nitrided silicon-oxide gate dielectric

Integrated photodetector waveguide structure with alignment tolerance

Backside device contact

Integrated waveguide structure with perforated chip edge seal

Silicon photonics integration method and structure

Butt-coupled buried waveguide photodetector

Integrated photodetector waveguide structure with alignment tolerance

Encapsulated sensors

Buried waveguide photodetector

Stress engineered multi-layers for integration of CMOS and Si nanophotonics

Deep trench capacitor and method

Method for fabricating a nitrided silicon-oxide gate dielectric

Integrated photodetector waveguide structure with alignment tolerance

GLOBALFOUNDRIES US INC

Micro-ring modulator

Optical components in the back-end-of-line stack of a photonics chip using plural cores vertically stacked

Photonics structures having a locally-thickened dielectric layer

Structure including resistor network for back biasing FET stack

Heterojunction bipolar transistor with buried trap rich isolation region

Heterojunction bipolar transistor with buried trap rich isolation region

Switchable polarization rotators

Thermally and electrically conductive interconnects

Field-effect transistors with a polycrystalline body in a shallow trench isolation region

Trap-rich layer in a high-resistivity semiconductor layer

Polarization switches including a phase change material

Waveguide structures

Multi-depth regions of high resistivity in a semiconductor substrate

Heterojunction bipolar transistors with one or more sealed airgap

GLOBALFOUNDRIES INC

Waveguide-to-waveguide couplers with multiple tapers

Bulk substrates with a self-aligned buried polycrystalline layer

Optical switches and routers operated by phase-changing materials controlled by heaters

Radio frequency switches with air gap structures

Heterogeneous directional couplers for photonics chips

Bragg gratings with airgap cladding

Waveguides with multiple airgaps arranged in and over a silicon-on-insulator substrate

Switches with deep trench depletion and isolation structures

Sealed cavity structures with non-planar surface features to induce stress

Waveguides with multiple-level airgaps

Embedded polysilicon resistors with crystallization barriers

Photodetector methods and photodetector structures

Deep trench isolation structures

CENTER FOR ADVANCED FIBEROPTIC

Method for fabrication of microchannel electron multipliers

GALILEO ELECTRO OPTICS CORP

Fabrication of a microchannel plate from a perforated silicon

ASSEFA SOLOMON

Germanium photodetector schottky contact for integration with CMOS and Si nanophotonics

KEMERER TIMOTHY W

Embedded series deep trench capacitors and methods of manufacture