Inventor
NG HUNG Y
US13 patents
⚠️ This page may combine multiple inventors who share the name “NG HUNG Y”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
10 patentsUS6884734B2Apr 26, 2005
Vapor phase etch trim structure with top etch blocking layer
IBM38 citations91
US4734157AMar 29, 1988
Selective and anisotropic dry etching
IBM44 citations89
US7785950B2Aug 31, 2010
Dual stress memory technique method and related structure
IBM9 citations84
US7452784B2Nov 18, 2008
Formation of improved SOI substrates using bulk semiconductor wafers
IBM11 citations84
US7442619B2Oct 28, 2008
Method of forming substantially L-shaped silicide contact for a semiconductor device
IBM9 citations84
US7064027B2Jun 20, 2006
Method and structure to use an etch resistant liner on transistor gate structure to achieve high device performance
IBM9 citations73
US7307323B2Dec 11, 2007
Structure to use an etch resistant liner on transistor gate structure to achieve high device performance
IBM2 citations62
US6656375B1Dec 2, 2003
Selective nitride: oxide anisotropic etch process
IBM3 citations62
US6369434B1Apr 9, 2002
Nitrogen co-implantation to form shallow junction-extensions of p-type metal oxide semiconductor field effect transistors
IBM2 citations62
US7932158B2Apr 26, 2011
Formation of improved SOI substrates using bulk semiconductor wafers
IBM0 citations52