Inventor
HONG SAMPHY
US13 patents
Patents
13 patentsUS12308237B2May 20, 2025
Ion implantation to increase MOSFET threshold voltage
APPLIED MATERIALS INC0 citations62
US12183794B2Dec 31, 2024
MOSFET gate shielding using an angled implant
APPLIED MATERIALS INC0 citations61
US11804537B2Oct 31, 2023
Channeled implants for SiC MOSFET fabrication
APPLIED MATERIALS INC1 citations61
US11527637B2Dec 13, 2022
Ion implantation to control formation of MOSFET trench-bottom oxide
APPLIED MATERIALS INC1 citations61
US11695060B2Jul 4, 2023
Ion implantation to form trench-bottom oxide of MOSFET
APPLIED MATERIALS INC0 citations60
US11437488B2Sep 6, 2022
Split-gate MOSFET with gate shield
APPLIED MATERIALS INC0 citations59
US12046473B2Jul 23, 2024
Backside wafer dopant activation
APPLIED MATERIALS INC0 citations58
US12087585B2Sep 10, 2024
Low-temperature implant for buried layer formation
APPLIED MATERIALS INC0 citations57
US11387338B1Jul 12, 2022
Methods for forming planar metal-oxide-semiconductor field-effect transistors
APPLIED MATERIALS INC1 citations53
US11721743B2Aug 8, 2023
Implantation enabled precisely controlled source and drain etch depth
APPLIED MATERIALS INC0 citations51
US12412789B2Sep 9, 2025
Endpoint optimization for semiconductor processes
APPLIED MATERIALS INC0 citations50
US11527412B2Dec 13, 2022
Method for increasing photoresist etch selectivity to enable high energy hot implant in SiC devices
APPLIED MATERIALS INC0 citations50
US11798982B2Oct 24, 2023
Self-aligned trench MOSFET
APPLIED MATERIALS INC0 citations48